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NGB18N40CLB PDF预览

NGB18N40CLB

更新时间： 2024-11-21 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 126K
描述
Ignition IGBT 18 Amps, 400 Volts

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中文翻译

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NGB18N40CLB 数据手册

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NGB18N40CLB,  
NGB18N40ACLB  
Ignition IGBT  
18 Amps, 400 Volts  
N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over−Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
18 AMPS, 400 VOLTS  
VCE(on) 3 2.0 V @  
IC = 10 A, VGE . 4.5 V  
C
Features  
• Ideal for Coil−on−Plug Applications  
• Gate−Emitter ESD Protection  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
G
Stress Applied to Load  
R
GE  
• Integrated ESD Diode Protection  
• New Design Increases Unclamped Inductive Switching (UIS) Energy  
Per Area  
E
• Low Threshold Voltage to Interface Power Loads to Logic or  
Microprocessor Devices  
2
D PAK  
CASE 418B  
STYLE 4  
• Low Saturation Voltage  
• High Pulsed Current Capability  
• Integrated Gate−Emitter Resistor (R  
)
GE  
• Emitter Ballasting for Short−Circuit Capability  
• These are Pb−Free Devices  
MARKING DIAGRAM  
4
Collector  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
GB  
18N40xG  
AYWW  
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
430  
430  
18  
Unit  
V
CES  
V
CER  
V
DC  
V
DC  
V
DC  
1
Gate  
3
V
GE  
Emitter  
2
Collector  
Collector Current−Continuous  
I
C
18  
50  
A
DC  
A
AC  
@ T = 25°C − Pulsed  
C
GB18N40x = Device Code  
x
A
Y
WW  
G
= B or A  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
ESD (Human Body Model)  
ESD  
ESD  
kV  
R = 1500 W, C = 100 pF  
8.0  
ESD (Machine Model) R = 0 W, C = 200 pF  
800  
V
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
115  
0.77  
W
W/°C  
C
ORDERING INFORMATION  
Operating and Storage Temperature Range T , T  
−55 to +175  
°C  
J
stg  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NGB18N40CLBT4G  
NGB18N40ACLBT4G  
2
D PAK  
800/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
December, 2011 − Rev. 4  
NGB18N40CLB/D  
12345678

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