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NGB18N40CLBT4_06 PDF预览

NGB18N40CLBT4_06

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 88K
描述
Ignition IGBT 18 Amps, 400 Volts

NGB18N40CLBT4_06 数据手册

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NGB18N40CLBT4  
Ignition IGBT  
18 Amps, 400 Volts  
N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over−Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
18 AMPS, 400 VOLTS  
VCE(on) 3 2.0 V @  
IC = 10 A, VGE . 4.5 V  
Features  
Ideal for Coil−on−Plug Applications  
Gate−Emitter ESD Protection  
C
Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
G
Integrated ESD Diode Protection  
New Design Increases Unclamped Inductive Switching (UIS) Energy  
R
GE  
Per Area  
Low Threshold Voltage to Interface Power Loads to Logic or  
Microprocessor Devices  
E
Low Saturation Voltage  
2
High Pulsed Current Capability  
D PAK  
CASE 418B  
STYLE 4  
Integrated Gate−Emitter Resistor (R  
Emitter Ballasting for Short−Circuit Capability  
Pb−Free Package is Available  
)
GE  
MARKING DIAGRAM  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Collector  
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
430  
430  
18  
Unit  
V
CES  
V
CER  
V
DC  
V
DC  
V
DC  
GB  
18N40BG  
AYWW  
V
GE  
1
Gate  
3
Collector Current−Continuous  
I
18  
50  
A
A
C
DC  
AC  
Emitter  
2
@ T = 25°C − Pulsed  
C
Collector  
ESD (Human Body Model)  
ESD  
kV  
R = 1500 W, C = 100 pF  
8.0  
GB18N40B = Device Code  
A
Y
= Assembly Location  
= Year  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
800  
V
WW  
G
= Work Week  
= Pb−Free Package  
Total Power Dissipation @ T = 25°C  
P
D
115  
0.77  
W
W/°C  
C
Derate above 25°C  
Operating and Storage Temperature Range T , T  
−55 to +175  
°C  
J
stg  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
Shipping  
2
NGB18N40CLBT4  
NGB18N40CLBT4G  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
2
D PAK  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 3  
NGB18N40CLB/D  

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