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NGB15N41ACL

更新时间： 2024-11-25 11:58:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 147K
描述
Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220

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NGB15N41ACL 数据手册

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NGD15N41CL,  
NGD15N41ACL,  
NGB15N41CL,  
NGB15N41ACL,  
NGP15N41CL,  
NGP15N41ACL  
http://onsemi.com  
Ignition IGBT 15 A, 410 V  
15 AMPS  
410 VOLTS  
N−Channel DPAK, D2PAK and TO−220  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over−Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
VCE(on) 3 2.1 V @  
IC = 10 A, VGE . 4.5 V  
C
Features  
• Ideal for Coil−on−Plug Applications  
• DPAK Package Offers Smaller Footprint and Increased Board Space  
• Gate−Emitter ESD Protection  
R
G
G
R
GE  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
• Integrated ESD Diode Protection  
• New Design Increases Unclamped Inductive Switching (UIS) Energy  
Per Area  
E
4
DPAK  
CASE 369C  
STYLE 2  
• Low Threshold Voltage to Interface Power Loads to Logic or  
Microprocessor Devices  
2
1
3
• Low Saturation Voltage  
• High Pulsed Current Capability  
2
4
D PAK  
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R  
)
G
GE  
CASE 418B  
STYLE 4  
• These are Pb−Free Devices  
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
3
J
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol Value  
Unit  
4
V
V
440  
440  
15  
V
DC  
V
DC  
V
DC  
CES  
CER  
V
GE  
TO−220AB  
CASE 221A  
STYLE 9  
Collector Current−Continuous  
I
C
15  
50  
A
DC  
A
AC  
@ T = 25°C − Pulsed  
C
ESD (Human Body Model)  
R = 1500 Ω, C = 100 pF  
ESD  
ESD  
kV  
8.0  
1
2
3
ESD (Machine Model) R = 0 Ω, C = 200 pF  
800  
V
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
107  
0.71  
Watts  
W/°C  
C
D
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
°C  
stg  
+175  
DEVICE MARKING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
See general marking information in the device marking  
section on page 8 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
December, 2011 − Rev. 8  
NGD15N41CL/D  
1234567...11

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