Datasheet > 晶体管 > 射频小信号场效应晶体管> NE76038-T1

NE76038-T1

更新时间： 2024-11-19 22:45:23

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
6页	44K
描述
LOW NOISE L TO Ku-BAND GaAs MESFET

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中文翻译

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技术参数
数据手册

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NE76038-T1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, S-PQSO-G4
针数：	4	Reach Compliance Code：	unknown
HTS代码：	8541.21.00.75	风险等级：	5.79
Is Samacsys：	N	其他特性：	LOW NOISE
配置：	SINGLE	最小漏源击穿电压：	5 V
FET 技术：	METAL SEMICONDUCTOR	最高频带：	X BAND
JESD-30 代码：	S-PQSO-G4	元件数量：	1
端子数量：	4	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最小功率增益 (Gp)：	12 dB	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	QUAD	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

NE76038-T1 数据手册

LOW NOISE

L TO Ku-BAND GaAs MESFET

NE76038

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE:

1.8 dB typical at 12 GHz

3.5

•

HIGH ASSOCIATED GAIN:

7.5 dB typical at 12 GHz

•

LG = 0.3 µm, WG = 280 µm

2.5

LOW COST PLASTIC PACKAGING

TAPE & REEL PACKAGING OPTION AVAILABLE

1.5

0.5

DESCRIPTION

NE76038 is a high performance gallium arsenide metal

semiconductor field effect transistor housed in a plastic

package. Its low noise figure makes this device appropriate

for use in the second or third stages of low noise amplifiers

operating in the 1 - 14 GHz frequency range. The device is

fabricated using ion implantation for improved RF and DC

performance, reliability, and uniformity. These devices fea-

ture a recessed 0.3 micron gate and triple epitaxial technol-

ogy.

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76038

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NFOPT¹

Optimum Noise Figure at VDS = 3 V, IDS = 10 mA

f = 4 GHz

f = 12 GHz

0.8

1.8

1.2

Associated Gain at VDS = 3 V, IDS = 10 mA

f = 4 GHz

f = 12 GHz

12.0

13.0

7.5

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0 V

Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA

Transconductance at VDS = 3 V, IDS = 10 mA

Gate to Source Leakage Current at VGS = -3 V

-3.0

-0.8

-0.5

µA

IGSO

Note:

1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit

with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go"

screening test with the fixture tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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与NE76038-T1相关器件

型号	品牌	获取价格	描述	数据表
NE76038-T1A	RENESAS	获取价格	RF SMALL SIGNAL, FET
NE76038-T1A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76038-T2	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE76083A	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, M
NE76083A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE76083A-2.4	RENESAS	获取价格	KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
NE76083A-2.4	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE76084	NEC	获取价格	C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76084S	NEC	获取价格	LOW NOISE L TO Ku BAND GaAs MESFET
NE76084S	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,

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