NE76100M

更新时间： 2024-01-31 06:51:44

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	54K
描述
GENERAL PURPOSE GaAs MESFET

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NE76100M 技术参数

生命周期：	Obsolete	包装说明：	UNCASED CHIP, R-XUUC-N5
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.40	风险等级：	5.82
其他特性：	LOW NOISE	配置：	SINGLE
最小漏源击穿电压：	5 V	最大漏极电流 (ID)：	0.06 A
FET 技术：	METAL SEMICONDUCTOR	最高频带：	X BAND
JESD-30 代码：	R-XUUC-N5	元件数量：	1
端子数量：	5	工作模式：	DEPLETION MODE
最高工作温度：	175 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE

NE76100M 数据手册

GENERAL PURPOSE

GaAs MESFET

NE76100

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE:

NF = 0.8 dB typical at f = 4 GHz

3.5

HIGH ASSOCIATED GAIN:

GA = 12.0 dB typical at f = 4 GHz

LG = 1.0 µm, WG = 400 µm

2.5

DESCRIPTION

1.5

NE76100 is a high performance gallium arsenide metal semi-

conductorfieldeffecttransistorchip.Itslownoisefiguremakes

this device appropriate for use in the second or third stages of

low noise amplifiers operating in the 1-12 GHz frequency

range. The device is fabricated using ion implantation for

improved RF and DC performance, reliability, and uniformity.

The NE76100 is suitable for a wide variety of commercial and

industrial applications.

0.5

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76100

00 (CHIP)

SYMBOLS

NFOPT¹

GA¹

PARAMETERS AND CONDITIONS

Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz

Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz

UNITS

MIN

TYP

0.8

MAX

1.4

12.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 4 GHz

VDS = 3 V, IDS = 10 mA

dBm

12.5

15.0

VDS = 3 V, IDS = 30 mA

G1dB

Gain at P1dB, f = 4 GHz

VDS = 3 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

11.5

13.5

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch Off Voltage at VDS = 3 V, ID = 100 mA

Transconductance at VDS = 3 V, ID = 10 mA

Gate to Source Leak Current at VGS = -5 V

-3.0

-1.1

100

-0.5

µA

IGSO

1.0

RTH

Thermal Resistance

°C/W

190

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects

for 10 samples.

2. Chip mounted on an infinite heat sink.

California Eastern Laboratories

12 3 4 5 6 7 8

中文翻译

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与NE76100M相关器件

型号	品牌	获取价格	描述	数据表
NE76100N	NEC	获取价格	GENERAL PURPOSE GaAs MESFET
NE76118	NEC	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76118_00	NEC	获取价格	GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
NE76118-M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T1	NEC	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76118-T1K	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T1M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T2	NEC	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76118-T2	RENESAS	获取价格	S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, 18, 4 PIN
NE76118-T2K	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M

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