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NE76118-T2M PDF预览

NE76118-T2M

更新时间： 2024-09-28 13:11:59
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
页数 文件大小 规格书
4页 32K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4

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NE76118-T2M 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.24其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：4 V最大漏极电流 (ID)：0.02 A
FET 技术：METAL SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-PDSO-G4元件数量：1
端子数量：4工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最小功率增益 (Gp)：9.5 dB认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

NE76118-T2M 数据手册

 浏览型号NE76118-T2M的Datasheet PDF文件第2页浏览型号NE76118-T2M的Datasheet PDF文件第3页浏览型号NE76118-T2M的Datasheet PDF文件第4页 
GaAs MESFET  
L TO S BAND LOW NOISE AMPLIFIER  
NE76118  
NOISE FIGURE & ASSOCIATED  
FEATURES  
GAIN vs. FREQUENCY  
VDS = 3 V, ID= 10 mA  
•
•
•
LOW COST MINIATURE PLASTIC PACKAGE  
(SOT-343)  
25  
20  
15  
10  
5
4
3
2
1
0
LOW NOISE FIGURE:  
0.8 dB typical at 2 GHz  
G
A
HIGH ASSOCIATED GAIN:  
13.5 dB typical at 2 GHz  
•
•
LG = 1.0 µm, WG = 400 µm  
TAPE & REEL PACKAGING  
0
NF  
DESCRIPTION  
The NE76118 is a low cost gallium arsenide metal semicon-  
ductor field effect transistor housed in a miniature (SOT-343)  
plasticsurfacemountpackage. Thedeviceisfabricatedusing  
ion implantation for improved RF and DC performance, reli-  
ability, and uniformity. Its low noise figure, high gain, small  
size and weight make it an ideal low noise amplifier transistor  
in the 1-4 GHz frequency range. The NE76118 is suitable for  
GPS, PCS, WLAN, MMDS, TVRO, and other commercial  
applications.  
0.5  
1
2
3
4
5 6 7 8 910  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE76118  
18  
SYMBOL  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF  
Noise Figure at VDS = 3 V, ID = 10 mA  
f = 2 GHz  
f = 4 GHz  
dB  
dB  
0.8  
0.9  
1.4  
GA  
Associated Gain at VDS = 3 V, ID = 10 mA  
f = 2 GHz  
f = 4 GHz  
dB  
dB  
13.5  
10.5  
9.5  
P1dB  
G1dB  
Output Power at 1 dB Gain Compression Point, f = 2 GHz  
VDS = 3 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dBm  
dBm  
12  
14  
Gain at P1dB, f = 2 GHz  
VDS = 3 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dB  
dB  
13  
14  
IDSS  
VP  
Saturated Drain Current at VDS = 3 V, VGS = 0 V  
Pinch Off Voltage at VDS = 3 V, ID = 100 µA  
Transconductance at VDS = 3 V, ID = 10 mA  
Gate to Source Leakage Current at VGS = -5 V  
mA  
V
30  
-3.0  
20  
100  
-0.5  
gm  
mS  
µA  
45  
IGSO  
10  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line  
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.  
California Eastern Laboratories  
1234

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