Datasheet > 晶体管 > 射频小信号场效应晶体管> NE76184A-TI

NE76184A-TI

更新时间： 2024-11-20 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	53K
描述
GENERAL PURPOSE L TO X-BAND GaAs MESFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE76184A-TI 数据手册

GENERAL PURPOSE

L TO X-BAND GaAs MESFET

NE76184AS

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE:

3.5

0.8 dB typical at 4 GHz

•

HIGH ASSOCIATED GAIN:

12 dB typical at 4 GHz

•

LG = 1.0 µm, WG = 400 µm

2.5

LOW COST METAL/CERAMIC PACKAGE

TAPE & REEL PACKAGING OPTION AVAILABLE

1.5

DESCRIPTION

0.5

NE76184AS is a high performance gallium arsenide metal

semiconductor field effect transistor housed in an epoxy-

sealed, metal/ceramic package. Its low noise figure makes

this device appropriate for use in the second or third stages of

low noise amplifiers operating in the 1-12 GHz frequency

range. The device is fabricated using ion implantation for

improved RF and DC performance, reliability, and uniformity.

The NE76184AS is suitable for DBS, TVRO, GPS and other

commercial applications.

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76184AS

84AS

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NF¹

Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz

Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz

0.8

1.4

12.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 4 GHz

VDS = 3 V, IDS = 10 mA

dBm

12.5

15.0

VDS = 3 V, IDS = 30 mA

G1dB

Gain at P1dB, f = 4 GHz

VDS = 3 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

11.5

13.5

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch Off Voltage at VDS = 3 V, ID = 100 µA

Transconductance at VDS = 3 V, ID = 10 mA

Gate to Source Leak Current at VGS = -5 V

Thermal Resistance

-3.0

-1.1

100

-0.5

µA

IGSO

RTH

°C/W

300

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

12 3 4

中文翻译

下载PDF

与NE76184A-TI相关器件

型号	品牌	获取价格	描述	数据表
NE76184B-T1	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184B-T1A	RENESAS	获取价格	X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4
NE76184B-T1A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184B-T1AK	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184B-T1AM	RENESAS	获取价格	X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4
NE76184B-T1AN	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184B-T1K	RENESAS	获取价格	X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4
NE76184B-T1K	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184B-T1M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184B-T1N	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M

与NE76184A-TI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

NE76184A-TI

NE76184A-TI 数据手册

与NE76184A-TI相关器件

与NE76184A-TI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NE76184A-TI

NE76184A-TI 数据手册

与NE76184A-TI相关器件

与NE76184A-TI相关文章

您还可以找

您在本页遇到什么问题？