生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 1.6 A |
最大漏极电流 (ID): | 1.6 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 8.5 dB | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE800495-6 | RENESAS |
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RF SMALL SIGNAL, FET | |
NE800495-6 | CEL |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800495-7 | RENESAS |
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RF SMALL SIGNAL, FET | |
NE800495-7 | CEL |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800495-8 | CEL |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800898-4 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD | |
NE800898-5 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD | |
NE800898-5H | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD | |
NE800898-6 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD | |
NE800898-7 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD |