生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CRDB-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 5 V |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | X BAND |
JESD-30 代码: | O-CRDB-F4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | RADIAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE77300 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 450MA I(C) | CHIP | |
NE77310 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 450MA I(C) | TO-46 | |
NE77320 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 450MA I(C) | STX-M3 | |
NE7785-15DL | NEC |
获取价格 |
RF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor | |
NE7FAAH0-0-B | ETC |
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N e u t r i k ® P a r t N u m b e r G u i d | |
NE7FAH0-0-B | ETC |
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N e u t r i k ® P a r t N u m b e r G u i d | |
NE7MAAH0-0-B | ETC |
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N e u t r i k ® P a r t N u m b e r G u i d | |
NE7MAH0-0-B | ETC |
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N e u t r i k ® P a r t N u m b e r G u i d | |
NE-8 | MPSIND |
获取价格 |
E-BEAM GUN SWITCHING POWER SUPPLY | |
NE800100 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |