生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 0.55 A | FET 技术: | METAL SEMICONDUCTOR |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 2.5 W | 子类别: | Other Transistors |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE800200 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET | |
NE800296 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800400 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800495-4 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET | |
NE800495-4 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800495-5 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET | |
NE800495-6 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET | |
NE800495-6 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se | |
NE800495-7 | RENESAS |
获取价格 |
RF SMALL SIGNAL, FET | |
NE800495-7 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se |