NE76184A-T1N

更新时间： 2024-09-30 13:11:59

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
10页	67K
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NE76184A-T1N 数据手册

DATA SHEET

GaAs MES FET

NE76184A

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

DESCRIPTION

NE76184A is a N-channel GaAs MES FET housed in ce-

ramic package. The device is fabricated by ion implantation for

improved RF and DC performance reliability and uniformity. Its

excellent low noise and high associated gain make it suitable

for DBS, TVRO, GPS and another commercial systems.

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

FEATURES

•

Low noise figure & High associated gain

NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz

ORDERING INFORMATION

SUPPLYING

PART NUMBER

LEAD LENGTH

FORM

NE76184A-SL

STICK

L = 1.7 mm MIN.

NE76184A-T1

Tape & reel

L = 1.0 ± 0.2 mm

0.5 TYP.

NE76184A-T1A

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

VDS

V^GSO

V^GDO

I^D

P^tot

T^ch

5.0

–5.0

–6.0

100

300

150

˚C

1. Source

2. Drain

3. Source

4. Gate

T^stg

–65 to +150 ˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cutoff Voltage

Transconductance

SYMBOL

IGSO

MIN.

–

TYP.

–

MAX.

UNIT

µA

TEST CONDITIONS

VGS = –5 V

IDSS

–0.5

–

100

–3.0

–

VDS = 3 V, VGS = 0

VGS (off)

–

VDS = 3 V, ID = 100 µA

VDS = 3 V, ID = 10 mA

0.8

Noise Figure

1.4

–

f = 4 GHz

V^DD= 3 V

Associated Gain

–

= 10 mA

Power Gain

–

f = 12 GHz

IDSS rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)

Document No. P10852EJ2V0DS00 (2nd edition)

(Previous No. TC-2303)

Data Published October 1995 P

Printed in Japan

1991

12 3 4 5 6 7...10

中文翻译

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