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NE76184AS PDF预览

NE76184AS

更新时间： 2024-02-09 14:16:02
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管放大器
页数 文件大小 规格书
4页 53K
描述
GENERAL PURPOSE L TO X-BAND GaAs MESFET

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中文翻译

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NE76184AS 技术参数

生命周期：Obsolete包装说明：DISK BUTTON, O-CRDB-F4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.84其他特性：LOW NOISE
配置：SINGLE最小漏源击穿电压：5 V
最大漏极电流 (ID)：0.1 AFET 技术：METAL SEMICONDUCTOR
最高频带：X BANDJESD-30 代码：O-CRDB-F4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：DISK BUTTON
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：RADIAL晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

NE76184AS 数据手册

 浏览型号NE76184AS的Datasheet PDF文件第2页浏览型号NE76184AS的Datasheet PDF文件第3页浏览型号NE76184AS的Datasheet PDF文件第4页 
GENERAL PURPOSE  
L TO X-BAND GaAs MESFET  
NE76184AS  
NOISE FIGURE & ASSOCIATED  
FEATURES  
GAIN vs. FREQUENCY  
VDS = 3 V, IDS = 10 mA  
•
LOW NOISE FIGURE:  
4
3.5  
3
24  
21  
18  
0.8 dB typical at 4 GHz  
•
HIGH ASSOCIATED GAIN:  
12 dB typical at 4 GHz  
G
A
•
•
•
LG = 1.0 µm, WG = 400 µm  
2.5  
2
15  
12  
9
LOW COST METAL/CERAMIC PACKAGE  
TAPE & REEL PACKAGING OPTION AVAILABLE  
1.5  
1
6
NF  
DESCRIPTION  
3
0
0.5  
0
NE76184AS is a high performance gallium arsenide metal  
semiconductor field effect transistor housed in an epoxy-  
sealed, metal/ceramic package. Its low noise figure makes  
this device appropriate for use in the second or third stages of  
low noise amplifiers operating in the 1-12 GHz frequency  
range. The device is fabricated using ion implantation for  
improved RF and DC performance, reliability, and uniformity.  
The NE76184AS is suitable for DBS, TVRO, GPS and other  
commercial applications.  
1
10  
20  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE76184AS  
84AS  
SYMBOL  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF1  
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz  
Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz  
dB  
dB  
0.8  
1.4  
1
GA  
12.0  
P1dB  
Output Power at 1 dB Gain Compression Point, f = 4 GHz  
VDS = 3 V, IDS = 10 mA  
dBm  
dBm  
12.5  
15.0  
VDS = 3 V, IDS = 30 mA  
G1dB  
Gain at P1dB, f = 4 GHz  
VDS = 3 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dB  
dB  
11.5  
13.5  
IDSS  
VP  
Saturated Drain Current at VDS = 3 V, VGS = 0  
Pinch Off Voltage at VDS = 3 V, ID = 100 µA  
Transconductance at VDS = 3 V, ID = 10 mA  
Gate to Source Leak Current at VGS = -5 V  
Thermal Resistance  
mA  
V
30  
-3.0  
20  
60  
-1.1  
45  
100  
-0.5  
gm  
mS  
µA  
IGSO  
RTH  
10  
°C/W  
300  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line  
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.  
California Eastern Laboratories  
1234

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与NE76184AS相关器件

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NE76184A-SL NEC

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 		GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NE76184A-SL CEL

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184A-SLK RENESAS

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 		X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4
NE76184A-SLM RENESAS

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 		X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CERAMIC PACKAGE-4
NE76184A-SLM NEC

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184A-SLN NEC

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184A-T1 CEL

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76184A-T1 NEC

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 		GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NE76184A-T1A NEC

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 		GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NE76184A-T1AK NEC

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M

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