Datasheet > NE76118_00

NE76118_00

更新时间： 2024-09-28 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		放大器
页数	文件大小	规格书
4页	32K
描述
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER

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NE76118_00 数据手册

GaAs MESFET

L TO S BAND LOW NOISE AMPLIFIER

NE76118

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 3 V, ID= 10 mA

•

LOW COST MINIATURE PLASTIC PACKAGE

(SOT-343)

LOW NOISE FIGURE:

0.8 dB typical at 2 GHz

HIGH ASSOCIATED GAIN:

13.5 dB typical at 2 GHz

•

LG = 1.0 µm, WG = 400 µm

TAPE & REEL PACKAGING

DESCRIPTION

The NE76118 is a low cost gallium arsenide metal semicon-

ductor field effect transistor housed in a miniature (SOT-343)

plasticsurfacemountpackage. Thedeviceisfabricatedusing

ion implantation for improved RF and DC performance, reli-

ability, and uniformity. Its low noise figure, high gain, small

size and weight make it an ideal low noise amplifier transistor

in the 1-4 GHz frequency range. The NE76118 is suitable for

GPS, PCS, WLAN, MMDS, TVRO, and other commercial

applications.

0.5

5 6 7 8 910

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76118

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Noise Figure at VDS = 3 V, ID = 10 mA

f = 2 GHz

f = 4 GHz

0.8

0.9

1.4

Associated Gain at VDS = 3 V, ID = 10 mA

f = 2 GHz

f = 4 GHz

13.5

10.5

9.5

P1dB

G1dB

Output Power at 1 dB Gain Compression Point, f = 2 GHz

VDS = 3 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

dBm

Gain at P1dB, f = 2 GHz

VDS = 3 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0 V

Pinch Off Voltage at VDS = 3 V, ID = 100 µA

Transconductance at VDS = 3 V, ID = 10 mA

Gate to Source Leakage Current at VGS = -5 V

-3.0

100

-0.5

µA

IGSO

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

12 3 4

中文翻译

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与NE76118_00相关器件

型号	品牌	获取价格	描述	数据表
NE76118-M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T1	NEC	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76118-T1K	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T1M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T2	NEC	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76118-T2	RENESAS	获取价格	S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, 18, 4 PIN
NE76118-T2K	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-T2M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76118-TI	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
NE76184A	NEC	获取价格	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

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