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NE76118-T2K PDF预览

NE76118-T2K

更新时间： 2024-01-24 20:19:28
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
页数 文件大小 规格书
4页 32K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4

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NE76118-T2K 技术参数

生命周期：Obsolete包装说明：PLASTIC, SUPERMINI-4
Reach Compliance Code：unknown风险等级：5.65
其他特性：LOW NOISE外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：4 V
最大漏极电流 (ID)：0.02 AFET 技术：METAL SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-PDSO-G4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：9.5 dB
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

NE76118-T2K 数据手册

 浏览型号NE76118-T2K的Datasheet PDF文件第2页浏览型号NE76118-T2K的Datasheet PDF文件第3页浏览型号NE76118-T2K的Datasheet PDF文件第4页 
GaAs MESFET  
L TO S BAND LOW NOISE AMPLIFIER  
NE76118  
NOISE FIGURE & ASSOCIATED  
FEATURES  
GAIN vs. FREQUENCY  
VDS = 3 V, ID= 10 mA  
•
•
•
LOW COST MINIATURE PLASTIC PACKAGE  
(SOT-343)  
25  
20  
15  
10  
5
4
3
2
1
0
LOW NOISE FIGURE:  
0.8 dB typical at 2 GHz  
G
A
HIGH ASSOCIATED GAIN:  
13.5 dB typical at 2 GHz  
•
•
LG = 1.0 µm, WG = 400 µm  
TAPE & REEL PACKAGING  
0
NF  
DESCRIPTION  
The NE76118 is a low cost gallium arsenide metal semicon-  
ductor field effect transistor housed in a miniature (SOT-343)  
plasticsurfacemountpackage. Thedeviceisfabricatedusing  
ion implantation for improved RF and DC performance, reli-  
ability, and uniformity. Its low noise figure, high gain, small  
size and weight make it an ideal low noise amplifier transistor  
in the 1-4 GHz frequency range. The NE76118 is suitable for  
GPS, PCS, WLAN, MMDS, TVRO, and other commercial  
applications.  
0.5  
1
2
3
4
5 6 7 8 910  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE76118  
18  
SYMBOL  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF  
Noise Figure at VDS = 3 V, ID = 10 mA  
f = 2 GHz  
f = 4 GHz  
dB  
dB  
0.8  
0.9  
1.4  
GA  
Associated Gain at VDS = 3 V, ID = 10 mA  
f = 2 GHz  
f = 4 GHz  
dB  
dB  
13.5  
10.5  
9.5  
P1dB  
G1dB  
Output Power at 1 dB Gain Compression Point, f = 2 GHz  
VDS = 3 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dBm  
dBm  
12  
14  
Gain at P1dB, f = 2 GHz  
VDS = 3 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dB  
dB  
13  
14  
IDSS  
VP  
Saturated Drain Current at VDS = 3 V, VGS = 0 V  
Pinch Off Voltage at VDS = 3 V, ID = 100 µA  
Transconductance at VDS = 3 V, ID = 10 mA  
Gate to Source Leakage Current at VGS = -5 V  
mA  
V
30  
-3.0  
20  
100  
-0.5  
gm  
mS  
µA  
45  
IGSO  
10  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line  
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.  
California Eastern Laboratories  
1234

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NE76184A-SLK RENESAS

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