Datasheet > NE76100_99

NE76100_99

更新时间： 2024-11-20 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	54K
描述
GENERAL PURPOSE GaAs MESFET

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NE76100_99 数据手册

GENERAL PURPOSE

GaAs MESFET

NE76100

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE:

NF = 0.8 dB typical at f = 4 GHz

3.5

HIGH ASSOCIATED GAIN:

GA = 12.0 dB typical at f = 4 GHz

LG = 1.0 µm, WG = 400 µm

2.5

DESCRIPTION

1.5

NE76100 is a high performance gallium arsenide metal semi-

conductorfieldeffecttransistorchip.Itslownoisefiguremakes

this device appropriate for use in the second or third stages of

low noise amplifiers operating in the 1-12 GHz frequency

range. The device is fabricated using ion implantation for

improved RF and DC performance, reliability, and uniformity.

The NE76100 is suitable for a wide variety of commercial and

industrial applications.

0.5

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76100

00 (CHIP)

SYMBOLS

NFOPT¹

GA¹

PARAMETERS AND CONDITIONS

Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz

Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz

UNITS

MIN

TYP

0.8

MAX

1.4

12.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 4 GHz

VDS = 3 V, IDS = 10 mA

dBm

12.5

15.0

VDS = 3 V, IDS = 30 mA

G1dB

Gain at P1dB, f = 4 GHz

VDS = 3 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

11.5

13.5

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch Off Voltage at VDS = 3 V, ID = 100 mA

Transconductance at VDS = 3 V, ID = 10 mA

Gate to Source Leak Current at VGS = -5 V

-3.0

-1.1

100

-0.5

µA

IGSO

1.0

RTH

Thermal Resistance

°C/W

190

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects

for 10 samples.

2. Chip mounted on an infinite heat sink.

California Eastern Laboratories

12 3 4 5 6 7 8

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NE76118-T1	NEC	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
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NE76118-T1M	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, M
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