生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CRDB-F4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 5 V |
最大漏极电流 (ID): | 0.1 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | KU BAND | JESD-30 代码: | O-CRDB-F4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 8 dB |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE76084 | NEC |
获取价格 |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET | |
NE76084S | NEC |
获取价格 |
LOW NOISE L TO Ku BAND GaAs MESFET | |
NE76084S | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
NE76084-SL | NEC |
获取价格 |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET | |
NE76084-T1 | NEC |
获取价格 |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET | |
NE76084-T1 | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
NE76084-T1A | NEC |
获取价格 |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET | |
NE76084-T2 | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
NE76100 | NEC |
获取价格 |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET | |
NE76100_99 | NEC |
获取价格 |
GENERAL PURPOSE GaAs MESFET |