Datasheet > NE334S01_00

NE334S01_00

更新时间： 2024-09-25 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	46K
描述
C BAND SUPER LOW NOISE HJ FET

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中文翻译

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数据手册

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NE334S01_00 数据手册

PRELIMINARY DATA SHEET

C BAND SUPER LOW NOISE HJ FET

NE334S01

FEATURES

• VERY LOW NOISE FIGURE:

MAXIMUM AVAILABLE GAIN, FORWARD

INSERTION GAIN vs. FREQUENCY

0.25 dB TYP at 4 GHz

• HIGH ASSOCIATED GAIN:

DS = 2 V

16.0 dB TYP at 4 GHz

ID = 10 mA

• GATE WIDTH: 280 µm

MSG.

• TAPE & REEL PACKAGING OPTION AVAILABLE

• LOW COST PLASTIC PACKAGE

|S21S

MAG.

DESCRIPTION

20 30

TheNE334S01isaHetero-JunctionFETthatusesthejunction

betweenSi-dopedAlGaAsandundopedInGaAstocreatevery

high mobility electrons. Its excellent low noise and high asso-

ciated gain make it suitable for TVRO and other commercial

systems.

Frequency, f (GHz)

RECOMMENDED

OPERATING CONDITION (TA = 25°C)

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

SYMBOLS CHARACTERISTIC

UNITS MIN TYP MAX

VDS

Drain to Source Voltage

Drain Current

2.5

dBm

Input Power

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE334S01

S01

SYMBOLS

PARAMETERS AND CONDITIONS

Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz

Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz

Saturated Drain Current, VDS = 2.0 V, VGS = 0 V

Transconductance, VDS = 2.0 V, ID = 14 mA

UNITS

MIN

TYP

0.25

16.0

MAX

NF¹

0.35

15.0

IDSS

150

VGS(off)

IGSO

Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA,

Gate to Source Leak Current, VGS = -3.0 V

-0.2

-0.9

0.5

-2.5

µA

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening tuned for the "generic" type but not each specimen.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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