Datasheet > NDT014(J23Z)

NDT014(J23Z)

更新时间： 2024-11-15 23:53:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
10页	226K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 2.7A I(D) \| SOT-223

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDT014(J23Z) 数据手册

September 1996

NDT014

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Power SOT N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as DC motor control

and DC/DC conversion where fast switching, low in-line power

loss, and resistance to transients are needed.

2.7A, 60V. R_DS(ON)= 0.2W @ V_GS= 10V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

_________________________________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

NDT014

Units

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

Drain Current

- Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

±2.7

±10

P_D

(Note 1b)

(Note 1c)

1.3

1.1

Operating and Storage Temperature Range

-65 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

* Order option J23Z for cropped center drain lead.

NDT014 Rev. C1

12 3 4 5 6 7...10

中文翻译

下载PDF

与NDT014(J23Z)相关器件

型号	品牌	获取价格	描述	数据表
NDT014/D84Z	TI	获取价格	2.7A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT014/J23Z	TI	获取价格	2.7A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET
NDT014/L99Z	TI	获取价格	2.7A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT014/S62Z	TI	获取价格	2.7A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT014_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
NDT014J23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
NDT014L	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDT014L	ONSEMI	获取价格	N 沟道逻辑电平增强型场效应晶体管，60V，2.8A，160mΩ
NDT014L/D84Z	TI	获取价格	暂无描述
NDT014L/L99Z	TI	获取价格	2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261