5秒后页面跳转
捷配首页

Datasheet > NDT014L
NDT014L PDF预览

NDT014L

更新时间： 2024-09-29 14:54:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管场效应晶体管
页数 文件大小 规格书
7页 212K
描述
N 沟道逻辑电平增强型场效应晶体管，60V，2.8A，160mΩ

阅读下载

中文翻译

获取价格

NDT014L 数据手册

 浏览型号NDT014L的Datasheet PDF文件第2页浏览型号NDT014L的Datasheet PDF文件第3页浏览型号NDT014L的Datasheet PDF文件第4页浏览型号NDT014L的Datasheet PDF文件第5页浏览型号NDT014L的Datasheet PDF文件第6页浏览型号NDT014L的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
N-Channel Logic Level  
Enhancement Mode Field  
Effect Transistor  
D
S
D
G
NDT014L  
SOT−223  
CASE 318H  
General Description  
These N−Channel logic level enhancement mode power field effect  
transistors are produced using onsemi’s proprietary, high cell density,  
DMOS technology. This very high density process is especially  
tailored to minimize on−state resistance, provide superior switching  
performance, and withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited for low  
voltage applications such as DC motor control and DC–DC  
conversion where fast switching, low in−line power loss, and  
resistance to transients are needed.  
D
D
S
G
MARKING DIAGRAM  
Features  
w 2.8 A, 60 V. R  
= 0.2 W @ V = 4.5 V  
GS  
DS(ON)  
R
= 0.16 W @ V = 10 V  
AYW  
014LG  
G
DS(ON)  
GS  
w High Density Cell Design For Extremely Low R  
DS(ON)  
w High Power and Current Handling Capability in a Widely Used  
1
Surface Mount Package  
A
Y
W
014L  
= Assembly Location  
= Year  
= Work Week  
w This Device is Pb−Free  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
= Specific Device Code  
G
= Pb−Free Package  
Symbol  
Parameter  
Drain−Source Voltage  
Value  
60  
Unit  
V
V
V
DSS  
Gate−Source Voltage  
20  
V
ORDERING INFORMATION  
GSS  
I
Drain Current  
A
D
†
Device  
NDT014L  
Package  
Shipping  
4000 /  
Tape & Reel  
− Continuous (Note 1a)  
2.8  
10  
3
SOT−223  
− Pulsed  
Maximum Power Dissipation (Note 1a)  
(Note 1b)  
P
W
D
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1.3  
1.1  
(Note 1c)  
T ,  
J
Operating and Storage Temperature Range −65 to 150  
°C  
T
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS Values are at T = 25°C unless  
A
otherwise noted.  
Symbol  
Parameter  
Ratings  
Unit  
R
Thermal Resistance, Junction−to−Ambient  
(Note 1a)  
42  
°C/W  
q
JA  
R
Thermal Resistance, Junction−to−Case  
(Note 1)  
12  
°C/W  
q
JC  
1
Publication Order Number:  
© Semiconductor Components Industries, LLC, 1997  
NDT014L/D  
September, 2022 − Rev. 5  
1234567

中文翻译

下载PDF

NDT014L 替代型号

型号 品牌 替代类型 描述 数据表
NDT014L FAIRCHILD

类似代替

 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDT014L_NL FAIRCHILD

功能相似

 Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Met

与NDT014L相关器件

型号 品牌 获取价格 描述 数据表
NDT014L/D84Z TI

获取价格

 		暂无描述
NDT014L/L99Z TI

获取价格

 		2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT014L/S62Z TI

获取价格

 		2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT014L_NL FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
NDT014L84Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
NDT014L99Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Sem
NDT014LD84Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
NDT014LJ23Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
NDT014LJ23ZD84Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
NDT014LL84Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Met

与NDT014L相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证