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NCP51705MNTXG

更新时间： 2024-01-18 12:47:20
品牌 Logo 应用领域
安森美 - ONSEMI 驱动接口集成电路驱动器
页数 文件大小 规格书
21页 406K
描述
Single 6 A High-Speed, Low-Side SiC MOSFET Driver

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中文翻译

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NCP51705MNTXG 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：HVQCCN, LCC24,.16SQ,20Reach Compliance Code：compliant
Factory Lead Time：30 weeks风险等级：1.59
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：S-PQCC-N24JESD-609代码：e4
长度：4 mm湿度敏感等级：1
功能数量：1端子数量：24
最高工作温度：25 °C最低工作温度：-40 °C
标称输出峰值电流：6 A封装主体材料：PLASTIC/EPOXY
封装代码：HVQCCN封装等效代码：LCC24,.16SQ,20
封装形状：SQUARE封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1 mm
最大压摆率：18 mA最大供电电压：22 V
最小供电电压：10 V标称供电电压：20 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.05 µs
接通时间：0.05 µs宽度：4 mm
Base Number Matches：1

NCP51705MNTXG 数据手册

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NCP51705  
Single 6 A High-Speed,  
Low-Side SiC MOSFET  
Driver  
The NCP51705 driver is designed to primarily drive SiC MOSFET  
transistors. To achieve the lowest possible conduction losses, the  
driver is capable to deliver the maximum allowable gate voltage to the  
SiC MOSFET device. By providing high peak current during turn−on  
and turn−off, switching losses are also minimized. For improved  
reliability, dV/dt immunity and even faster turn−off, the NCP51705  
can utilize its on−board charge pump to generate a user selectable  
negative voltage rail.  
For full compatibility and to minimize the complexity of the bias  
solution in isolated gate drive applications the NCP51705 also  
provides an externally accessible 5 V rail to power the secondary side  
of digital or high speed opto isolators.  
www.onsemi.com  
MARKING  
DIAGRAM  
24  
1
ZXYTT  
P51705  
MPX  
QFN24 4x4  
MN SUFFIX  
CASE 485L  
Z
X
Y
TT  
MP  
X
= Plant Code  
= 1−Digit Year Code  
= 1−Digit Week Code  
= 2−Digit Die Run Code  
= Package Type (QFN)  
= Package Type (Tape & Reel)  
The NCP51705 offers important protection functions such as  
under−voltage lockout monitoring for the bias power and thermal  
shutdown based on the junction temperature of the driver circuit.  
Features  
• High Peak Output Current with Split Output Stages to allow  
independent Turn−ON/Turn−OFF Adjustment;  
♦ Source Capability: 6 A  
PIN CONNECTIONS  
♦ Sink Capability: 6 A  
• Extended Positive Voltage Rating for Efficient SiC MOSFET  
Operation during the Conduction Period  
• User−adjustable Built−in Negative Charge Pump for Fast Turn−off  
and Robust dV/dt Immunity  
IN+  
IN−  
1
2
3
4
5
6
18 OUTSRC  
17 OUTSRC  
16 PGND  
• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply  
XEN  
NCP51705  
(Top View )  
• Adjustable Under−Voltage Lockout  
• Desaturation Function  
SGND  
VEESET  
VCH  
15 PGND  
14 OUTSNK  
13 OUTSNK  
• Thermal Shutdown Function (TSD)  
• Small & Low Parasitic Inductance QFN24 Package  
Typical Applications  
• Driving SiC MOSFET  
• Industrial Inverters, Motor Drivers  
• PFC, AC to DC and DC to DC Converters  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NCP51705MNTXG QFN24 3000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
June, 2018 − Rev. 2  
NCP51705/D  
1234567...21

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