Datasheet > NCP51820D

NCP51820D

更新时间： 2024-11-27 02:52:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
20页	787K
描述
High Speed Half-Bridge Driver for GaN Power Switches

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中文翻译

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NCP51820D 数据手册

High Speed Half-Bridge

Driver for GaN Power

Switches

NCP51820

The NCP51820 high−speed, gate driver is designed to meet the

stringent requirements of driving enhancement mode (e−mode), high

electron mobility transistor (HEMT) and gate injection transistor

(GIT), gallium nitrade (GaN) power switches in off−line, half−bridge

power topologies. The NCP51820 offers short and matched

propagation delays with advanced level shift technology providing

−3.5 V to +650 V (typical) common mode voltage range for the

high−side drive and −3.5 V to +3.5 V common mode voltage range for

the low−side drive. In addition, the device provides stable dV/dt

operation rated up to 200 V/ns for both driver output stages in high

speed switching applications.

To fully protect the gate of the GaN power transistor against

excessive voltage stress, both drive stages employ a dedicated voltage

regulator to accurately maintain the gate−source drive signal

amplitude. The circuit actively regulates the driver’s bias rails and thus

protects against potential gate−source over−voltage under various

operating conditions.

www.onsemi.com

QFN15 4x4, 0.5P

CASE 485FN

MARKING DIAGRAM

51820A

ALYW G

51820A = Specific Device Code

The NCP51820 offers important protection functions such as

independent under−voltage lockout (UVLO), monitoring VDD bias

voltage and VDDH and VDDL driver bias and thermal shutdown

based on die junction temperature of the device. Programmable

dead−time control can be configured to prevent cross−conduction.

= Assembly Site

= Wafer Lot Number

= Assembly Start Week

= Pb−Free Package

(Note: Microdot may be in either location)

Features

PIN ASSIGNMENT

• 650 V, Integrated High−Side and Low−Side Gate Drivers

• UVLO Protections for VDD High and Low−Side Drivers

• Dual TTL Compatible Schmitt Trigger Inputs

• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment

• Source Capability: 1 A; Sink Capability: 2 A

VDDH

13 EN

12 HIN

11 LIN

HOSRC

HOSNK

• Separated HO and LO Driver Output Stages

NCP51820

(Top View)

• 1 ns Rise and Fall Times Optimized for GaN Devices

• SW and PGND: Negative Voltage Transient up to 3.5 V

• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry

• Maximum Propagation Delay of Less Than 50 ns

• Matched Propagation Delays to Less Than 5 ns

• User Programmable Dead−Time Control

10 SGND

• Thermal Shutdown (TSD)

Typical Applications

ORDERING INFORMATION

• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,

Active Clamp Flyback or Forward, Totem Pole PFC and

Synchronous Rectifier Topologies

• Industrial Inverters and Motor Drives

• AC to DC Converters

†

Device

NCP51820AMNTWG

Package

Shipping

QFN15

(Pb−Free)

4000 / Tape

& Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

August, 2020 − Rev. 2

NCP51820/D

12 3 4 5 6 7...20

中文翻译

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与NCP51820D相关器件

型号	品牌	获取价格	描述	数据表
NCP51820GAN2GEVB	ONSEMI	获取价格	NCP51820 HighâSpeed, HalfâBridge, GaN Dri
NCP5183	ONSEMI	获取价格	High Voltage High Current High and Low Side Driver
NCP5183DR2G	ONSEMI	获取价格	High Voltage High Current High and Low Side Driver
NCP5201	ONSEMI	获取价格	Dual Output DDR Power Controller
NCP5201/D	ETC	获取价格	Dual Output DDR Power Controller
NCP5201_06	ONSEMI	获取价格	Dual Output DDR Power Controller
NCP5201MN	ONSEMI	获取价格	Dual Output DDR Power Controller
NCP5201MNG	ONSEMI	获取价格	Dual Output DDR Power Controller
NCP5201MNR2	ONSEMI	获取价格	Dual Output DDR Power Controller
NCP5201MNR2G	ONSEMI	获取价格	Dual Output DDR Power Controller

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