Datasheet > NCP51810AMNTWG

NCP51810AMNTWG

更新时间： 2024-11-24 11:14:15

品牌	Logo	应用领域
安森美 - ONSEMI		开关驱动电源开关驱动器
页数	文件大小	规格书
20页	770K
描述
高性能，200 V 半桥门极驱动器，用于 GaN 电源开关

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NCP51810AMNTWG 数据手册

DATA SHEET

www.onsemi.com

High Speed Half-Bridge

Driver for GaN Power

Switches

QFN15 4x4, 0.5P

CASE 485FN

NCP51810

The NCP51810 high−speed, gate driver is designed to meet the

stringent requirements of driving enhancement mode (e−mode), high

electron mobility transistor (HEMT), gallium nitrade (GaN) power

switches in medium−voltage half−bridge DC−DC application. The

NCP51810 offers short and matched propagation delays with

advanced level shift technology providing −3.5 V to +150 V (typical)

common mode voltage range for the high−side drive and −3.5 V to

+3.5 V common mode voltage range for the low−side drive. In

addition, the device provides stable dV/dt operation rated up to 200

V/ns for both driver output stages in high speed switching

applications.

To fully protect the gate of the GaN power transistor against

excessive voltage stress, both drive stages employ a dedicated voltage

regulator to accurately maintain the gate−source drive signal

amplitude. The circuit actively regulates the driver’s bias rails and thus

protects against potential gate−source over−voltage under various

operating conditions.

MARKING DIAGRAM

51810A

ALYW G

51810A = Specific Device Code

= Assembly Site

= Wafer Lot Number

= Assembly Start Week

= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

The NCP51810 offers important protection functions such as

independent under−voltage lockout (UVLO), monitoring VDD bias

voltage and VDDH and VDDL driver bias and thermal shutdown

based on die junction temperature of the device. Programmable

dead−time control can be configured to prevent cross−conduction.

VDDH

13 EN

12 HIN

11 LIN

HOSRC

HOSNK

Features

NCP51810

(Top View)

• 150 V, Integrated High−Side and Low−Side Gate Drivers

• UVLO Protections for VDD High and Low−Side Drivers

• Dual TTL Compatible Schmitt Trigger Inputs

• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment

• Source Capability: 1 A; Sink Capability: 2 A

• Separated HO and LO Driver Output Stages

• 1 ns Rise and Fall Times Optimized for GaN Devices

• SW and PGND: Negative Voltage Transient up to 3.5 V

• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry

• Maximum Propagation Delay of Less Than 50 ns

• Matched Propagation Delays to Less Than 5 ns

• User Programmable Dead−Time Control

10 SGND

ORDERING INFORMATION

†

Device

NCP51810AMNTWG

Package

Shipping

QFN15

(Pb−Free)

4000 / Tape

& Reel

• Thermal Shutdown (TSD)

Typical Applications

• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,

Active Clamp Flyback or Forward and Synchronous Rectifier

Topologies

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,

Industrial Modules

Publication Order Number:

May, 2022 − Rev. 3

NCP51810/D

12 3 4 5 6 7...20

中文翻译

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与NCP51810AMNTWG相关器件

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NCP5181DR2G	ONSEMI	获取价格	High Voltage High and Low Side Driver
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NCP51820	ONSEMI	获取价格	High Speed Half-Bridge Driver for GaN Power Switches
NCP51820AMNTWG	ONSEMI	获取价格	High Speed Half-Bridge Driver for GaN Power Switches
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NCP5183	ONSEMI	获取价格	High Voltage High Current High and Low Side Driver
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