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MVUMAF5817 PDF预览

MVUMAF5817

更新时间： 2024-10-28 14:54:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞄准线光电二极管
页数 文件大小 规格书
3页 306K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, PLASTIC PACKAGE-2

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MVUMAF5817 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：R-PDSO-N2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.92
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW POWER LOSS
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：R-PDSO-N2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-50 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：20 V
表面贴装：YES技术：SCHOTTKY
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MVUMAF5817 数据手册

 浏览型号MVUMAF5817的Datasheet PDF文件第2页浏览型号MVUMAF5817的Datasheet PDF文件第3页 
UMAF5817, UMAF5818, and UMAF5819  
ULTRAMITE™ SURFACE MOUNT  
SCHOTTKY BARRIER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
ENVIRONMENTALLY LEAD-FREE  
DESCRIPTION  
APPEARANCE  
The UMAF5817 thru UMAF5819 UltraMite™ series offers a Lead-Free  
construction (both internally and externally) in a small efficient surface  
mount package with the same electrical features as the popular 1N5817,  
1N5818, and 1N5819 Schottky rectifiers. It provides the same size footprint  
as other small surface mount DO-214AC or BA package options except  
with a much lower profile height. Its configuration in a “2010 MELF” style  
robust package design prevents lead damage to terminals and also  
minimizes parasitics by eliminating internal wire bonds and providing very  
short internal conduction paths.  
UltraMite™  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Plastic package has Underwriters Laboratory  
•
•
For surface mount applications  
Flammability classification 94V-0  
For use in low-voltage high-frequency switching  
power supplies, inverters, free wheeling, and  
polarity protection applications  
Low power loss, High efficiency  
Low inductive parasitics for minimal Ldi/dt effects  
•
•
•
•
•
•
Metal to silicon rectifier, majority carrier conduction  
High current capability, low VF  
Built-in stress relief with similar COE as PC boards  
Lead-Free construction externally and internally  
Optional Lead-Tin finish available (UMA5817-19)  
Options for screening in accordance with MIL-PRF-  
19500/586 for JAN, JANTX, JANTXV, and JANS  
are available by adding MQ, MX, MV, or MSP  
prefixes respectively to part numbers. For example,  
designate a MXUMAFJ5819 for a JANTX screen.  
•
•
•
Fits same small PCB footprints as popular  
“SMAJxxx” or “SMBJxxx” Schottky devices in  
JEDEC outlines DO-214AC (or BA) and DO-214AA  
respectively except with much lower height profile  
•
Robust 2010 MELF style package configuration for  
pick-and-place handling  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
FRP substrate material and epoxy under-fill  
•
•
•
Operating junction and storage temperature  
range (TJ and TSTG): -50 oC to +125oC  
package meeting UL94V-0  
Terminals Tin plated (solderable per MIL-STD-750,  
Method 2026)  
Body marked with F817, F818, or F819  
Cathode designated with band  
Weight: 0.020 grams  
Tape & Reel packaging per EIA-481-2 with 12 mm  
tape and 3000 units/reel (7 inch reel) or 10,000  
units/reel (13 inch reel)  
Forward average rectified current (IO)  
@TC=75oC: 1.0 Amp  
•
•
•
•
Forward surge current (IFSM) 8.3 ms single half-  
sine waveform superimposed on rated load  
(JEDEC Method): 25 Amps  
•
•
Typical thermal resistance (RθJL): 50 oC/W  
Typical junction capacitance (CJ) at 1.0 MHz  
and VR of 5.0 Volts: 65 pF for UMAF5817, and  
46 pF for UMAF5818 and UMAF5819  
•
See package dimensions on last page  
•
Solder temperatures: 260 ºC for 10 s (maximum)  
ELECTRICAL CHARACTERISTICS @ 25oC unless specified otherwise  
Working  
Maximum  
Maximum  
Maximum  
Maximum  
Maximum  
dc reverse  
current @  
VRWM  
Maximum dc  
Peak  
RMS  
Peak  
Forward  
Forward  
reverse  
Reverse  
Voltage  
VRWM  
Voltage;  
Repetitive  
Voltage;  
VRRM  
Voltage at 1.0A Voltage at 3.0A  
current @  
(note 1)  
VF  
(note 1)  
VF  
VRWM ,100oC  
Part  
VRMS  
Volts  
14  
IR  
IR  
mA  
10  
Number  
Volts  
Volts  
20  
Volts  
0.45  
Volts  
0.75  
mA  
UMAF5817 20  
UMAF5818 30  
UMAF5819 40  
0.5  
21  
30  
0.55  
0.875  
0.90  
0.5  
10  
28  
40  
0.60  
0.5  
10  
NOTES: (1) Pulse test with PW=300 µsec, 1% duty cycle.  
Microsemi  
Page 1  
Copyright 2002  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
9-16-03 REV A  
123

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