Datasheet > MVUPS5819E3

MVUPS5819E3

更新时间： 2024-10-28 14:54:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞄准线二极管
页数	文件大小	规格书
4页	296K
描述
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE 1, DO-216, 1 PIN

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MVUPS5819E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-216	包装说明：	S-PSSO-G1
针数：	1	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.7	Is Samacsys：	N
其他特性：	FREE WHEELING DIODE, LOW POWER LOSS	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	DO-216AA
JESD-30 代码：	S-PSSO-G1	JESD-609代码：	e3
元件数量：	1	端子数量：	1
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MVUPS5819E3 数据手册

UPS5817e3 and UPS5819e3

POWERMITE 1™ SURFACE MOUNT

1 AMP 20 and 40 V SCHOTTKY RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The UPS5817e3 and UPS5819e3 offer a small and powerful surface mount

package that is RoHS compliant for a 1 Amp rated Schottky. These ratings

are found only in much larger packages. They are ideal for surface mount

applications that operate at high frequencies with their “hot carrier” features

that provide extremely fast switching. The very low thermal resistance of the

patented Powermite 1™ package design with a full metallic bottom and

unique locking tab act as an efficient heat path to a heat sink mounting permitting

cooler operating junction temperatures for minimal reverse leakage currents

and lower power loss. It is also ideal for automatic insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

DO-216

Powermite 1™

FEATURES

APPLICATIONS / BENEFITS

•

Low profile DO-216 package (<1.1 mm)

RoHS compliant with e3 suffix part number

Small footprint area of 8.45 mm²

•

High current capability with low forward voltage

Guard-ring-die construction for transient protection

•

Silicon Schottky (hot carrier) rectifier for minimal t

and minimal reverse recovery voltage

Plastic package has Underwriters Laboratory

Flammability classification 94V-0

Elimination of reverse-recovery oscillations to

reduce need for EMI filtering

•

Unique locking tab on bottom acts as integral efficient

heat path to heat sink (mounting substrate)

For use in high-frequency switching power supplies,

inverters, free wheeling, charge pump circuits and

polarity protection applications

•

Metal to silicon rectifier, majority carrier conduction

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers. For example, designate a MXUPS5819e3

for a JANTX screen. Consult factory for Tin-Lead

plating.

Optional avionics screening available by adding MA

prefix for 100% temperature cycling, thermal

impedance testing, and 24 hours HTRB. For example,

designate a MAUPS5819e3. Consult factory for Tin-

Lead plating.

•

Lower forward power loss and high efficiency

Low inductive parasitics (<2nH) for minimal Ldi/dt

effects

•

Robust package configuration for pick-and-place

handling

•

Full-metallic bottom eliminates flux entrapment

Small foot print with 0.100 x 0.160 inches (see

mounting pad details on last page)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Storage temperature (T_STG): -55 ^oC to +150^oC

•

Terminals: Copper with annealed matte-Tin plating

for RoHS compliance solderable per MIL-STD-750

method 2026 (consult factory for Tin-Lead plating.)

Polarity: Backside is cathode

Marking: UPS5817e3 marked with S17•

and UPS5819e3 marked with S19•

Operating junction temperature (T_J): -55 ^oC to +150^oC

Average forward rectified current (I_O) @T_C=100^oC: 1.0

Amp

•

Forward surge current (I_FSM) 8.3 ms single half-sine

waveform superimposed on rated load (JEDEC

Method): 50 Amps

Thermal resistance junction to case (bottom): 10 ^oC/W

Thermal resistance (R_θJA): 240 ^oC/W on PCB with FR4

using 1 oz Copper and recommended mounting pad

size (see pad layout next page)

Solder temperatures: 260 ^ºC for 10 s (maximum)

•

Molded epoxy package meets UL94V-0

Weight: 0.016 grams (approximate)

•

Tape & Reel option: 12 mm tape per EIA-481-B

3000 units on 7 inch reel and 12,000 on 13” reel

(add TR7 or TR13 respectively to part number)

•

See package dimensions on last page

•

6-26-2007 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与MVUPS5819E3相关器件

型号	品牌	获取价格	描述	数据表
MVUPS5819E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS760E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS840E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS84E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTI
MVUPT10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10E3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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