是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | R-PSSO-G2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.28 | 应用: | GENERAL PURPOSE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 40 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MVUPT10 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10E3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10R | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RE3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RE3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RTR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RTR13E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |