Datasheet > MVUPS840E3

MVUPS840E3

更新时间： 2024-10-29 04:56:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	109K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE3, 3 PIN

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MVUPS840E3 数据手册

UPS840e3

POWERMITE 3™ SURFACE MOUNT

8 AMP 40 V SCHOTTKY RECTIFIER

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The UPS840e3 offers a small and powerful surface mount package that is

RoHS compliant for a 40 Volt 8 Amp rated Schottky. These ratings are found

only in much larger packages. They are ideal for surface mount applications

that operate at high frequencies with their “hot carrier” features that provide

extremely fast switching. The very low thermal resistance of the patented

Powermite 3™ package design with a full metallic bottom and unique locking

tab act as an efficient heat path to a heat sink mounting permitting cooler operating

junction temperatures for minimal reverse leakage currents and lower power

loss. It is also ideal for automatic insertion equipment.

Powermite 3™

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Low profile package (<1.1 mm)

Small footprint area of 16.51 mm²

•

High current capability with low forward voltage

Guard-ring-die construction for transient protection

Plastic package has Underwriters Laboratory

Flammability classification 94V-0

•

Silicon Schottky (hot carrier) rectifier for minimal t

and minimal reverse recovery voltage

•

Unique locking tab on bottom acts as integral efficient

heat path to heat sink (mounting substrate)

Elimination of reverse-recovery oscillations to

reduce need for EMI filtering

•

Metal to silicon rectifier, majority carrier conduction

RoHS compliant with e3 suffix part number

For use in high-frequency switching power supplies,

inverters, free wheeling, charge pump circuits and

polarity protection applications

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers. For example, designate a MXUPS840e3 for

a JANTX screen. Consult factory for Tin-Lead

plating.

Optional avionics screening available by adding MA

prefix for 100% temperature cycling, thermal

impedance testing, and 24 hours HTRB. For example,

designate a MAUPS840e3. Consult factory for Tin-

Lead plating.

•

Lower forward power loss and high efficiency

Low inductive parasitics (<2nH) for minimal Ldi/dt

effects

•

Robust package configuration for pick-and-place

handling

•

Full-metallic bottom eliminates flux entrapment

Small foot print with 0.190 x 0.270 inches (see

mounting pad details on last page)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Storage temperature (T_STG): -55 ^oC to +150^oC

•

Terminals: Copper with annealed matte-Tin plating

for RoHS compliance solderable per MIL-STD-750

method 2026 (consult factory for Tin-Lead plating.)

Polarity: Two-leads on side are internally

connected together for anode and backside is

cathode

Marking: Body marked with S840•

Molded epoxy package meets UL94V-0

Weight: 0.072 grams (approximate)

Operating junction temperature (T_J): -55 ^oC to +125^oC

Average forward rectified current (I_O) @T_C=100^oC: 8.0

Amps

•

Forward surge current (I_FSM) 8.3 ms single half-sine

waveform superimposed on rated load (JEDEC

Method): 150 Amps

Thermal resistance (R_θJC): 2.5 ^oC/W

Thermal resistance (R_θJA): 65 ^oC/W on PCB with FR4

using 2 oz Copper and recommended mounting pad size

(see pad layout next page)

•

Tape & Reel packaging per EIA-481-2 with 16 mm

tape and 5000 units/ 13 inch reel)

•

See package dimensions on last page

•

Typical junction capacitance (C_J) at 1.0 MHz and V_Rof

4.0 Volts: 700 pF

Solder temperatures: 260 ^ºC for 10 s (maximum)

6-26-07 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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与MVUPS840E3相关器件

型号	品牌	获取价格	描述	数据表
MVUPS84E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTI
MVUPT10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10E3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10RE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10RE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MVUPT10RTR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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