是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | R-PSSO-G2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.74 |
应用: | EFFICIENCY | 外壳连接: | CATHODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 100 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 7 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 60 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MVUPS840E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL | |
MVUPS84E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTI | |
MVUPT10 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10E3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10R | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RE3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MVUPT10RE3/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |