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MVUPS1040CTE3

更新时间： 2024-11-24 20:09:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 功效二极管
页数 文件大小 规格书
6页 252K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE3, 2 PIN

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中文翻译

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MVUPS1040CTE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PSSO-G2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.7
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：R-PSSO-G2
JESD-609代码：e3最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：40 V
表面贴装：YES技术：SCHOTTKY
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MVUPS1040CTE3 数据手册

 浏览型号MVUPS1040CTE3的Datasheet PDF文件第2页浏览型号MVUPS1040CTE3的Datasheet PDF文件第3页浏览型号MVUPS1040CTE3的Datasheet PDF文件第4页浏览型号MVUPS1040CTE3的Datasheet PDF文件第5页浏览型号MVUPS1040CTE3的Datasheet PDF文件第6页 
UPS1040CTe3  
10 A Dual Schottky Barrier Rectifiers  
KEY FEATURES  
DESCRIPTION  
This UPS1040CTe3 in the Powermite3® package is a high efficiency center-  
tap dual Schottky rectifier that is also RoHS compliant offering high  
current/power capabilities previously found only in much larger packages.  
They are ideal for SMD applications that operate at high frequencies. In  
addition to its size advantages, the Powermite3® package includes a full  
metallic bottom that eliminates the possibility of solder flux entrapment  
during assembly and a unique locking tab act as an efficient heat path to the  
heat-sink mounting. Its innovative design makes this device ideal for use  
with automatic insertion equipment.  
ƒ Very low thermal resistance package  
ƒ Dual center-tap Schottky configuration with  
common cathode  
ƒ RoHS Compliant with e3 suffix part number  
ƒ Guard-ring-die construction for transient  
protection  
ƒ Efficient heat path with Integral locking bottom  
metal tab  
ƒ Low forward voltage  
ƒ Full metallic bottom eliminates flux entrapment  
ƒ Compatible with automatic insertion  
ƒ Low profile-maximum height of 1mm  
ƒ Options for screening in accordance with MIL-  
PRF-19500 for JAN, JANTX, and JANTXV are  
available by adding MQ, MX, or MV prefixes  
respectively to part numbers. For example,  
designate MXUPS1040CTe3 for a JANTX  
(consult factory for Tin-Lead plating).  
ƒ Optional 100% avionics screening available by  
adding MA prefix for 100% temperature cycle,  
thermal impedance and 24 hours HTRB  
(consult factory for Tin-Lead plating)  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
RMS Reverse Voltage  
28  
10  
V
A
V R (RMS)  
Io  
APPLICATIONS/BENEFITS  
Average Rectified Output Current  
ƒ Switching and Regulating Power supplies.  
ƒ Silicon Schottky (hot carrier) rectifier for  
minimal reverse voltage recovery  
ƒ Elimination of reverse-recovery oscillations to  
reduce need for EMI filtering  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on Rated Load@ Tc =90 ºC  
150  
A
IFSM  
Storage Temperature  
Junction Temperature  
TSTG  
TJ  
-55 to +150  
-55 to +125  
ºC  
ºC  
ƒ Charge Pump Circuits  
ƒ Reduces reverse recovery loss with low IRM  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance (dual device)  
ƒ Small foot print  
190 X 270 mils (1:1 Actual size)  
See mounting pad details on pg 5  
MECHANICAL & PACKAGING  
Junctions-to Bottom (Case)  
2.5  
ºC/Watt  
RθJC  
• CASE: Void-free transfer molded  
thermosetting epoxy compound meeting  
UL94V-0  
• FINISH: Annealed matte-Tin plating over  
copper and readily solderable per MIL-STD-  
750 method 2026 (consult factory for Tin-Lead  
plating)  
• POLARITY: See figure (left)  
• MARKING: S1040CT•  
• WEIGHT: 0.072 gram (approx.)  
• Package dimension on last page  
•
Tape & Reel option: 16 mm tape per Standard  
EIA-481-B, 5000 on 13” reel  
Copyright © 2007  
6/26/2007 Rev C  
Microsemi  
Page 1  
123456

中文翻译

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与MVUPS1040CTE3相关器件

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS360E3 MICROSEMI

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS5100E3 MICROSEMI

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, P
MVUPS540E3 MICROSEMI

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL

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