Datasheet > MVUPS360E3

MVUPS360E3

更新时间： 2024-10-28 14:54:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		功效二极管
页数	文件大小	规格书
5页	358K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE3, 3 PIN

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技术参数
数据手册

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MVUPS360E3 技术参数

生命周期：	Active	包装说明：	ROHS COMPLIANT, PLASTIC, POWERMITE3, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.21	Is Samacsys：	N
应用：	EFFICIENCY	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	最大非重复峰值正向电流：	100 A
元件数量：	1	相数：	1
端子数量：	2	最高工作温度：	125 °C
最低工作温度：	-55 °C	最大输出电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
最大重复峰值反向电压：	60 V	表面贴装：	YES
技术：	SCHOTTKY	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
Base Number Matches：	1

MVUPS360E3 数据手册

UPS360e3

3 A Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

This UPS360e3 in the Powermite3^®package is a high efficiency Schottky rectifier

that is also RoHS compliant offering high current/power capabilities previously

found only in much larger packages. They are ideal for SMD applications that

operate at high frequencies. In addition to its size advantages, the Powermite3^®

package includes a full metallic bottom that eliminates the possibility of solder flux

entrapment during assembly and a unique locking tab act as an efficient heat path to

the heat-sink mounting. Its innovative design makes this device ideal for use with

automatic insertion equipment.

Very low thermal resistance package

RoHS Compliant with e3 suffix part number

Guard-ring-die construction for transient

protection

Efficient heat path with Integral locking bottom

metal tab

Low forward voltage

Full metallic bottom eliminates flux entrapment

Compatible with automatic insertion

Low profile-maximum height of 1mm

Options for screening in accordance with MIL-

PRF-19500 for JAN, JANTX, JANTXV, and

JANS are available by adding MQ, MX, MV, or

MSP prefixes respectively to part numbers.

For example, designate MXUPS360e3 for a

JANTX (consult factory for Tin-Lead plating).

Optional 100% avionics screening available by

adding MA prefix for 100% temperature cycle,

thermal impedance and 24 hours HTRB

(consult factory for Tin-Lead plating)

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

APPLICATIONS/BENEFITS

RMS Reverse Voltage

V _{R (RMS)}

I_o

Switching and Regulating Power Supplies.

Silicon Schottky (hot carrier) rectifier for

minimal reverse voltage recovery

Elimination of reverse-recovery oscillations

to reduce need for EMI filtering

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on Rated Load

100 @ 25ºC

50 @ 100ºC

I_FSM

Charge Pump Circuits

Reduces reverse recovery loss with low I_RM

Storage Temperature

Junction Temperature

T_STG

T_J

-55 to +150

-55 to +125

ºC

Small foot print

THERMAL CHARACTERISTICS

190 X 270 mils (1:1 Actual size)

See mounting pad details on pg 3

Thermal Resistance

MECHANICAL & PACKAGING

Junction-to-case (bottom)

Junction to ambient (1)

(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print

R_θJC

R_θJA

3.2

ºC/ Watt

• CASE: Void-free transfer molded

thermosetting epoxy compound meeting

UL94V-0

• FINISH: Annealed matte-Tin plating over

copper and readily solderable per MIL-

STD-750 method 2026 (consult factory for

Tin-Lead plating)

Powermite 3™

• POLARITY: See figure (left)

• MARKING: S360•

• WEIGHT: 0.072 gram (approx.)

• Package dimension on last page

• Tape & Reel option: 16 mm tape per

Standard EIA-481-B, 5000 on 13” reel

5-19-05 Rev A

Microsemi

Page 1

12 3 4 5

中文翻译

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与MVUPS360E3相关器件

型号	品牌	获取价格	描述	数据表
MVUPS5100E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, P
MVUPS540E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS560E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS5817E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5817E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5817E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS760E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL

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