Datasheet > MVUPS560E3

MVUPS560E3

更新时间： 2024-10-28 20:53:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		功效二极管
页数	文件大小	规格书
3页	200K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN

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技术参数
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MVUPS560E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.76	应用：	EFFICIENCY
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
最大非重复峰值正向电流：	100 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大输出电流：	5 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
最大重复峰值反向电压：	60 V	表面贴装：	YES
技术：	SCHOTTKY	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

MVUPS560E3 数据手册

UPS560e3

5 A Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

This UPS560e3 in the Powermite3^®package is a high efficiency Schottky

rectifier that is also RoHS compliant offering high current/power capabilities

previously found only in much larger packages. They are ideal for SMD

applications that operate at high frequencies. In addition to its size

advantages, the Powermite3^®package includes a full metallic bottom that

eliminates the possibility of solder flux entrapment during assembly and a

unique locking tab act as an efficient heat path to the heat-sink mounting.

Its innovative design makes this device ideal for use with automatic insertion

equipment.

Very low thermal resistance package

RoHS Compliant with e3 suffix part

number

Guard-ring-die construction for transient

protection

Efficient heat path with Integral locking

bottom metal tab

Low forward voltage

Full metallic bottom eliminates flux

entrapment

Compatible with automatic insertion

Low profile-maximum height of 1mm

Options for screening in accordance with

MIL-PRF-19500 for JAN, JANTX, and

JANTXV are available by adding MQ, MX,

or MV prefixes respectively to part

numbers. For example, designate

MXUPS560e3 for a JANTX (consult

factory for Tin-Lead plating).

Optional 100% avionics screening

available by adding MA prefix for 100%

temperature cycle, thermal impedance

and 24 hours HTRB (consult factory for

Tin-Lead plating)

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V _{R (RMS)}

I_o

Average Rectified Output Current

APPLICATIONS/BENEFITS

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on Rated Load@ T_c=90 ºC

100

I_FSM

Switching and Regulating Power

Supplies.

Silicon Schottky (hot carrier) rectifier for

minimal reverse voltage recovery

Elimination of reverse-recovery

oscillations to reduce need for EMI

filtering

Storage Temperature

Junction Temperature

T_STG

T_J

-55 to +150

-55 to +125

ºC

THERMAL CHARACTERISTICS

Charge Pump Circuits

Reduces reverse recovery loss with low

I_RM

Thermal Resistance

Junction-to-case (bottom)

Junction to ambient (1)

R_θJC

R_θJA

3.2

ºC/ Watt

(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print

Small foot print

190 X 270 mils (1:1 Actual size)

See mounting pad details on pg 3

Powermite 3™

MECHANICAL & PACKAGING

•

CASE: Void-free transfer molded

thermosetting epoxy compound meeting

UL94V-0

FINISH: Annealed matte-Tin plating over

copper and readily solderable per MIL-

STD-750 method 2026 (consult factory

for Tin-Lead plating)

•

POLARITY: See figure (left)

MARKING: S560•

WEIGHT: 0.072 gram (approx.)

Package dimension on last page

Tape & Reel option: 16 mm tape per

Standard EIA-481-B, 5000 on 13” reel

Note: 1 Short duration test pulse used to minimize self – heating effect.

6-26-2007 REV D

Microsemi

Page 1

12 3

中文翻译

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与MVUPS560E3相关器件

型号	品牌	获取价格	描述	数据表
MVUPS5817E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5817E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5817E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS760E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS840E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS84E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTI
MVUPT10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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