Datasheet > MVUPS3100E3

MVUPS3100E3

更新时间： 2024-10-28 19:47:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		功效二极管
页数	文件大小	规格书
5页	298K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN

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技术参数
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MVUPS3100E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	R-PSSO-G2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.84	应用：	EFFICIENCY
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
最大非重复峰值正向电流：	50 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大输出电流：	3 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
最大重复峰值反向电压：	100 V	表面贴装：	YES
技术：	SCHOTTKY	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

MVUPS3100E3 数据手册

UPS3100e3

3 A High Voltage Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

This UPS3100e3 in the Powermite3^®package is a high efficiency Schottky

rectifier that is also RoHS compliant offering high current/power capabilities

previously found only in much larger packages. They are ideal for SMD

applications that operate at high frequencies. In addition to its size

advantages, the Powermite3^®package includes a full metallic bottom that

eliminates the possibility of solder flux entrapment during assembly and a

unique locking tab act as an efficient heat path to the heat-sink mounting.

Its innovative design makes this device ideal for use with automatic

insertion equipment.

Very low thermal resistance package

RoHS Compliant with e3 suffix part number

Guard-ring-die construction for transient

protection

Efficient heat path with Integral locking

bottom metal tab

Low forward voltage

Full metallic bottom eliminates flux

entrapment

Compatible with automatic insertion

Low profile-maximum height of 1mm

Options for screening in accordance with

MIL-PRF-19500 for JAN, JANTX, JANTXV,

and JANS are available by adding MQ, MX,

MV, or MSP prefixes respectively to part

numbers. For example, designate

MXUPS3100e3 for a JANTX (consult factory

for Tin-Lead plating).

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Optional 100% avionics screening available

by adding MA prefix for 100% temperature

cycle, thermal impedance and 24 hours

HTRB (consult factory for Tin-Lead plating)

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RMS Reverse Voltage

V_R(RMS)

I_o

APPLICATIONS/BENEFITS

Average Rectified Output Current

Switching and Regulating Power Supplies.

Silicon Schottky (hot carrier) rectifier for

minimal reverse voltage recovery

Elimination of reverse-recovery oscillations

to reduce need for EMI filtering

Charge Pump Circuits

Reduces reverse recovery loss with low I_RM

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on Rated Load@ T_c=90 ºC

I_FSM

Storage Temperature

Junction Temperature

-55 to +150

-55 to +125

ºC

T_STG

T_J

THERMAL CHARACTERISTICS

Small foot print

190 X 270 mils (1:1 Actual size)

See mounting pad details on pg 3

Thermal Resistance

Junction-to-Case (bottom)

Junction to Ambient (1)

R_θJC

R_θJA

2.5

ºC/ Watt

MECHANICAL & PACKAGING

(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print

• CASE: Void-free transfer molded

thermosetting epoxy compound meeting

UL94V-0

Powermite 3™

• FINISH: Annealed matte-Tin plating over

copper and readily solderable per MIL-

STD-750 method 2026 (consult factory for

Tin-Lead plating)

• POLARITY: See figure (left)

• MARKING: S3100•

• WEIGHT: 0.072 gram (approx.)

• Package dimension on last page

• Tape & Reel option: 16 mm tape per

Standard EIA-481-B, 5000 on 13” reel

5-31-2005 Rev B

Microsemi

Page 1

12 3 4 5

中文翻译

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与MVUPS3100E3相关器件

型号	品牌	获取价格	描述	数据表
MVUPS340E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS360E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS5100E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, P
MVUPS540E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS560E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MVUPS5817E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5817E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5817E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MVUPS5819E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE

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