是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-216 |
包装说明: | ROHS COMPLIANT, PLASTIC, DO-216, POWERMITE-1 | 针数: | 1 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.41 |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-216AA | JESD-30 代码: | S-PSSO-G1 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 1 | 最高工作温度: | 125 °C |
最低工作温度: | -65 °C | 最大输出电流: | 1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 60 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MVUPS3100E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, P | |
MVUPS340E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL | |
MVUPS360E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL | |
MVUPS5100E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, P | |
MVUPS540E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL | |
MVUPS560E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL | |
MVUPS5817E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE | |
MVUPS5817E3TR13 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE | |
MVUPS5817E3TR7 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE | |
MVUPS5819E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE |