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MVUPR10E3 PDF预览

MVUPR10E3

更新时间： 2024-10-28 19:31:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 功效光电二极管
页数 文件大小 规格书
2页 116K
描述
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

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中文翻译

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MVUPR10E3 技术参数

生命周期：Active零件包装代码：DO-216AA
包装说明：ROHS COMPLIANT, PLASTIC, POWERMITE-2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.75
应用：EFFICIENCY配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-216AAJESD-30 代码：S-PDSO-G1
JESD-609代码：e3最大非重复峰值正向电流：25 A
元件数量：1相数：1
端子数量：1最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：2.5 A
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE认证状态：Not Qualified
参考标准：MIL-19500最大反向恢复时间：0.025 µs
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

MVUPR10E3 数据手册

 浏览型号MVUPR10E3的Datasheet PDF文件第2页 
UPR5e3, UPR10e3, UPR15e3  
2.5 Amp High Efficiency Ultrafast Rectifier  
KEY FEATURES  
DESCRIPTION  
The Microsemi UPR5e3, UPR10e3, and UPR15e3 Powermite® high  
efficiency rectifiers are RoHS compliant and offers optimized forward  
voltage characteristics with reverse blocking capabilities up to 150 Volts.  
They are ideal for surface mount applications that operate at high  
frequencies.  
ƒ Low thermal resistance DO-216 package for  
higher current operation  
ƒ Utrasfast recovery time of 25 ns  
ƒ RoHS Compliant with e3 suffix part number  
ƒ Efficient heat path with Integral locking  
bottom metal tab  
ƒ Low forward voltage  
ƒ Full metallic bottom eliminates flux  
entrapment  
ƒ Compatible with automatic insertion  
ƒ Low profile-maximum height of 1mm  
ƒ Options for screening in accordance with  
MIL-PRF-19500 for JAN, JANTX, and  
JANTXV are available by adding MQ, MX, or  
MV prefixes respectively to part numbers.  
For example, designate MXUPR5e3 for a  
JANTX (consult factory for Tin-Lead plating).  
ƒ Optional 100% avionics screening available  
by adding MA prefix for 100% temperature  
cycle, thermal impedance and 24 hours  
HTRB (consult factory for Tin-Lead plating)  
In addition to its size advantages, Powermite® package features include a  
full metallic bottom that eliminates possibility of solder flux entrapment  
during assembly and a unique locking tab acts as an efficient heat path  
from die to mounting plane for external heat sinking with very low thermal  
resistance junction to case (bottom). Its innovative design makes this  
device ideal for use with automatic insertion equipment.  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
APPLICATIONS/BENEFITS  
VRWM  
VRWM  
VRWM  
Working Peak Reverse Voltage UPR5e3  
Working Peak Reverse Voltage UPR10e3  
Working Peak Reverse Voltage UPR15e3  
50  
100  
150  
V
V
V
ƒ Switching and Regulating Power Supplies.  
ƒ Charge Pump Circuits  
ƒ Reduces reverse recovery loss with low IRM  
ƒ Small 8.45 mm2 foot print  
Average Rectified Output Current (at rated  
VRWM, TC =75ºC)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half-sine wave  
2.5  
25  
A
A
Io  
(See mounting pad details next page)  
IFSM  
MECHANICAL & PACKAGING  
Storage Temperature  
Junction Temperature  
-55 to +150  
-55 to +150  
ºC  
ºC  
TSTG  
TJ  
• CASE: Void-free transfer molded  
thermosetting epoxy compound meeting  
UL94V-0  
• FINISH: Annealed matte-Tin plating over  
copper and readily solderable per MIL-  
STD-750 method 2026 (consult factory for  
Tin-Lead plating)  
• POLARITY: See figure (left)  
• MARKING: UPR5e3: R05•  
UPR10e3: R10•  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance  
Junction-to-case (bottom)  
Junction-to-ambient (1)  
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print  
RθJC  
RθJA  
10  
240  
ºC/ Watt  
ºC/ Watt  
UPR15e3: R15•  
• WEIGHT: 0.016 grams (approx.)  
• Package dimension on last page  
• Tape & Reel option: 12 mm tape per  
Standard EIA-481-B, 3000 on 7 inch reel  
and 12,000 on 13” reel  
DO-216  
See further details and dimensions on last page  
Copyright © 2007  
6-26-2007 Rev B  
Microsemi  
Page 1  
12

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