是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-216 |
包装说明: | PLASTIC, DO-216, POWERMITE-2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.83 |
应用: | EFFICIENCY | 外壳连接: | CATHODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-216AA |
JESD-30 代码: | S-PDSO-G1 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 25 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
最大输出电流: | 2.5 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 235 | 参考标准: | MIL-19500 |
最大重复峰值反向电压: | 150 V | 最大反向恢复时间: | 0.025 µs |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MVUPR15E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POW | |
MVUPR5 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon, DO-216AA, PLASTIC, DO-216, | |
MVUPR5E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POW | |
MVUPS1040CTE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, ROHS COMPLIANT, P | |
MVUPS1040E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, ROHS COMPLIANT, P | |
MVUPS120E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P | |
MVUPS120EE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P | |
MVUPS140E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P | |
MVUPS160E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P | |
MVUPS3100E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, P |