Datasheet > MRF9060NBR1

MRF9060NBR1

更新时间： 2024-11-14 04:14:39

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RF Power Field Effect Transistors

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MRF9060NBR1 数据手册

Document Number: MRF9060N

Rev. 10, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9060NR1

MRF9060NBR1

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applications

in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 18.0 dB

945 MHz, 60 W, 26 V

LATERAL N-CHANNEL

BROADBAND

Efficiency — 40% (Two Tones)

IMD — -31.5 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

RF POWER MOSFETs

Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• 200_C Capable Plastic Package

CASE 1265-08, STYLE 1

TO-270-2

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

PLASTIC

MRF9060NR1

• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

• TO-272-2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

CASE 1337-03, STYLE 1

TO-272-2

PLASTIC

MRF9060NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +65

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

223

1.79

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1)

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

0.56

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

MRF9060NR1 MRF9060NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MRF9060NBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9060NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060R1	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060S	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060SR1	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9080	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080LR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9080LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS

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