Datasheet > MRF9060NR1_09

MRF9060NR1_09

更新时间： 2024-10-01 12:20:03

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	455K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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中文翻译

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数据手册

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MRF9060NR1_09 数据手册

Document Number: MRF9060N

Rev. 13, 6/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common-source amplifier applications in 26 volt

base station equipment.

MRF9060NR1

• Typical Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 18.0 dB

945 MHz, 60 W, 26 V

LATERAL N-CHANNEL

BROADBAND

Efficiency — 40% (Two Tones)

IMD — -31.5 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

RF POWER MOSFET

Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• 200_C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

CASE 1265-09, STYLE 1

TO-270-2

13 inch Reel.

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

223

1.79

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.56

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M2 (Minimum)

C6 (Minimum)

Machine Model

Charge Device Model

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22-A113, IPC/JEDEC J-STD-020

260

°C

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF9060NR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MRF9060NR1_09相关器件

型号	品牌	获取价格	描述	数据表
MRF9060R1	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060S	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060SR1	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9080	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080LR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9080LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN

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