Datasheet > MRF5S19150HR3_08

MRF5S19150HR3_08

更新时间： 2024-01-15 21:48:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
10页	433K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF5S19150HR3_08 数据手册

Document Number: MRF5S19150H

Rev. 4, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for PCN and PCS base station applications at frequencies from

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

MRF5S19150HR3

• Typical 2-Carrier N-CDMA Performance for V_DD= 28 Volts, I_DQ

1400 mA, Avg., P_out= 32 Watts Avg., f = 1990 MHz, IS-95 CDMA

(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

1930-1990 MHz, 32 W AVG., 28 V

2 x N-CDMA

Drain Efficiency — 26%

LATERAL N-CHANNEL

RF POWER MOSFET

IM3 @ 2.5 MHz Offset — -36.5 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — -50 dB in 30 kHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465B-03, STYLE 1

NI-880

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

427

2.44

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

CW Operation @ T = 25°C

Derate above 25°C

120

0.76

W/°C

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 32 W CW

°C/W

0.41

0.44

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S19150HR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

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与MRF5S19150HR3_08相关器件

型号	品牌	获取价格	描述	数据表
MRF5S19150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S19150S	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-880S, CASE 465C-02, 2 PIN
MRF5S19150SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF5S21045	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045MBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045MR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21045NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF5S21045NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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