Datasheet > MRF581_08

MRF581_08

更新时间： 2024-09-27 10:47:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		射频微波
页数	文件大小	规格书
6页	147K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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MRF581_08 数据手册

MRF581

MRF581G

MRF581A

MRF581AG

*G Denotes RoHS Compliant, Pb free Terminal Finish

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

•

Low Noise - 2.5 dB @ 500 MHZ

Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

Ftau - 5.0 GHz @ 10v, 75mA

Cost Effective MacroX Package

Macro X

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

MRF581

MRF581A

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

2.5

200

Thermal Data

Total Device Dissipation @ TC = 50ºC

Derate above 50ºC

2.5

Watts

mW/ ºC

Total Device Dissipation @ TC = 25ºC

Derate above 25ºC

1.25

Watts

mW/ ºC

Storage Junction Temperature Range

Tstg

-65 to +150

150

ºC

Maximum Junction Temperature

T_Jmax

Revision A- December 2008

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Visit our website at www.microsemi.com or contact our factory direct.

12 3 4 5 6

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