Datasheet > MRF1570NT1_08

MRF1570NT1_08

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
23页	615K
描述
RF Power Field Effect Transistors

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MRF1570NT1_08 数据手册

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

—

μA

DSS

(V = 60 Vdc, V = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V = 12.5 Vdc, I = 0.8 mAdc)

—

Vdc

GS(th)

Drain-Source On-Voltage

(V = 10 Vdc, I = 2.0 Adc)

—

DS(on)

Dynamic Characteristics

Input Capacitance (Includes Input Matching Capacitance)

—

500

250

iss

(V = 12.5 Vdc, V = 0 V, f = 1 MHz)

Output Capacitance

oss

(V = 12.5 Vdc, V = 0 V, f = 1 MHz)

Reverse Transfer Capacitance

(V = 12.5 Vdc, V = 0 V, f = 1 MHz)

rss

RF Characteristics (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

—

11.5

—

(V = 12.5 Vdc, P = 70 W, I

= 800 mA)

f = 470 MHz

out

Drain Efficiency

(V = 12.5 Vdc, P = 70 W, I

= 800 mA)

out

MRF1570NT1 MRF1570FNT1

RF Device Data

Freescale Semiconductor

123 4 5 6 7...23

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