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MRF160 PDF预览

MRF160

更新时间: 2024-11-04 22:45:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管
页数 文件大小 规格书
8页 125K
描述
MOSFET BROADBAND RF POWER FET

MRF160 技术参数

生命周期:Transferred包装说明:DISK BUTTON, O-CRDB-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.23
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):1 A
最大漏极电流 (ID):1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRDB-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:N-CHANNEL
功耗环境最大值:24 W最小功率增益 (Gp):15 dB
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF160 数据手册

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Order this document  
by MRF160/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement–Mode MOSFET  
Designed primarily for wideband large–signal output and driver from  
30–500 MHz.  
Typical Performance at 400 MHz, 28 Vdc  
Output Power = 4.0 Watts  
Gain = 17 dB  
4.0 W, to 400 MHz  
MOSFET BROADBAND  
RF POWER FET  
Efficiency = 50%  
Excellent Thermal Stability, Ideally Suited for Class A Operation  
Facilitates Manual Gain Control, ALC and Modulation Techniques  
100% Tested for Load Mismatch at All Phase Angles with  
30:1 VSWR  
Low C  
– 0.8 pF Typical at V = 28 Volts  
DS  
rss  
CASE 249–06, STYLE 3  
D
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Vdc  
ADC  
Drain–Gate Voltage  
V
DSS  
Drain–Gate Voltage (R  
Gate–Source Voltage  
= 1.0 M)  
V
DGR  
65  
GS  
V
GS  
± 40  
1.0  
Drain Current–Continuous  
I
D
P
D
24  
0.14  
Watts  
W/°C  
Total Device Dissipation @ T = 25°C  
C
Derate Above 25°C  
Storage Temperature Range  
T
– 65 to +150  
200  
°C  
°C  
stg  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
T
J
R
7.2  
°C/W  
θJC  
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 2  
Motorola, Inc. 1995  

MRF160 替代型号

型号 品牌 替代类型 描述 数据表
MRF160 MACOM

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The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
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