生命周期: | Transferred | 包装说明: | DISK BUTTON, O-CRDB-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 65 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | O-CRDB-F4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 24 W | 最小功率增益 (Gp): | 15 dB |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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