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MRF158R PDF预览

MRF158R

更新时间: 2024-02-13 00:35:45
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 射频
页数 文件大小 规格书
6页 97K
描述
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

MRF158R 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38其他特性:TMOS
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (ID):0.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
最小功率增益 (Gp):16 dB认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

MRF158R 数据手册

 浏览型号MRF158R的Datasheet PDF文件第2页浏览型号MRF158R的Datasheet PDF文件第3页浏览型号MRF158R的Datasheet PDF文件第4页浏览型号MRF158R的Datasheet PDF文件第5页浏览型号MRF158R的Datasheet PDF文件第6页 
Order this document  
by MRF158/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF TMOS Line  
N–Channel Enhancement Mode  
Designed for wideband large–signal amplifier and oscillator applications to  
500 MHz.  
Guaranteed 28 Volt, 400 MHz Performance  
Output Power = 2.0 Watts  
Minimum Gain = 16 dB  
2.0 W, to 500 MHz  
TMOS  
Efficiency = 55% (Typical)  
BROADBAND  
RF POWER FET  
Grounded Source Package for High Gain and Excellent Heat  
Dissipation (MRF158R)  
Facilitates Manual Gain Control, ALC and Modulation  
Techniques  
100% Tested for Load Mismatch at All Phase Angles with  
30:1 VSWR  
Excellent Thermal Stability, Ideally Suited for Class A  
Operation  
Circuit board photomaster available upon request by  
contacting RF Tactical Marketing in Phoenix, AZ.  
D
G
CASE 305A–01, STYLE 2  
S
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Drain–Source Voltage  
Drain–Gate Voltage (R  
Gate–Source Voltage  
V
DSS  
Vdc  
Vdc  
Vdc  
Adc  
= 1.0 M)  
V
DGR  
65  
GS  
V
GS  
±40  
0.5  
Drain Current — Continuous  
I
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
8.0  
45  
Watts  
mW/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
13.2  
°C/W  
θJC  
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
Motorola, Inc. 1994  

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