Datasheet > MMFT60R380PCTH

MMFT60R380PCTH

更新时间： 2024-11-12 01:16:43

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1253K
描述
600V 0.38(ohm) N-channel MOSFET

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MMFT60R380PCTH 数据手册

MMFT60R380PC Datasheet

MMFT60R380PC

600V 0.38Ω N-channel MOSFET

 Description

MMFT60R380PC is power MOSFET using magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.38

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMFT60R380PCTH T60R380PC

-55 ~ 150℃

TO-220 FT

Tube

Halogen Free

Mar. 2016 Revision 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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