Datasheet > MMFT65R195P

MMFT65R195P

更新时间： 2024-11-12 01:16:43

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1281K
描述
650V 0.195(ohm) N-channel MOSFET

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MMFT65R195P 数据手册

MMFT65R195P Datasheet

MMFT65R195P

650V 0.195Ω N-channel MOSFET

 Description

MMFT65R195P is power MOSFET using magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

700

0.195

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMFT65R195PTH

T65R195P

-55 ~ 150℃

TO-220FT

Tube

Halogen Free

Aug. 2013 Revision 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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