Datasheet > MMFT65R380QTH

MMFT65R380QTH

更新时间： 2024-11-12 17:15:31

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1211K
描述
TO-220FT

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MMFT65R380QTH 数据手册

MMFT65R380Q Datasheet

MMFT65R380Q

650V 0.38Ω N-channel MOSFET

 Description

MMFT65R380Q is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_{j, max}

R_{DS(on), max}

V_{GS(th), typ}

I_D

Value

Unit

700

0.38

Ω

11.0

20.6

Q_{g, typ}

 Features



Low power loss by high speed switching and low on-resistance

100% avalanche tested

Green package – Pb-free plating, Halogen-free

 Applications



PFC power supply stages

Switching applications

Adapter

 Ordering Information

Order Code

Marking

T65R380Q

Temp. Range

-55 ~ 150^oC

Package

Packing

RoHS Status

MMFT65R380QTH

TO-220FT

Tube

Compliant

Jul. 2022. Revision 1.0

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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