Datasheet > MMFT960T1_06

MMFT960T1_06

更新时间： 2024-02-07 20:26:44

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	59K
描述
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223

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中文翻译

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数据手册

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MMFT960T1_06 数据手册

MMFT960T1

Preferred Device

Power MOSFET

300 mA, 60 Volts

N−Channel SOT−223

This Power MOSFET is designed for high speed, low loss power

switching applications such as switching regulators, dc−dc converters,

solenoid and relay drivers. The device is housed in the SOT−223

package which is designed for medium power surface mount

applications.

http://onsemi.com

300 mA, 60 VOLTS

R_DS(on)= 1.7 W

Features

N−Channel

• Silicon Gate for Fast Switching Speeds

• Low Drive Requirement

• The SOT−223 Package can be Soldered Using Wave or Reflow

• The Formed Leads Absorb Thermal Stress During Soldering

Eliminating the Possibility of Damage to the Die

• Pb−Free Package is Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

TO−261AA

CASE 318E

STYLE 3

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Non−Repetitive

Drain Current

Symbol

Value

Unit

300

0.8

mAdc

MARKING DIAGRAM AND

PIN ASSIGNMENT

Total Power Dissipation @ T = 25°C

(Note 1)

Derate above 25°C

6.4

mW/°C

°C

4 Drain

Operating and Storage Temperature Range T , T

−65 to 150

stg

AYW

FT960 G

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Ambient

156

260

°C/W

°C

Maximum Temperature for Soldering

Purposes

Gate Drain Source

Time in Solder Bath

= Assembly Location

= Year

= Work Week

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum

recommended footprint.

= Pb−Free Package

FT960 = Device Code

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

MMFT960T1

MMFT960T1G

Package

Shipping

SOT−223

1000 Tape & Reel

SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 5

MMFT960T1/D

12 3 4

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与MMFT960T1_06相关器件

型号	品牌	获取价格	描述	数据表
MMFT960T1G	ONSEMI	获取价格	Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
MMFTN0202KE	SWST	获取价格	小信号金氧半電晶體
MMFTN0206KW	SWST	获取价格	小信号金氧半電晶體
MMFTN0206KW-AH	SWST	获取价格	小信号金氧半電晶體
MMFTN0250KW	SWST	获取价格	小信号金氧半電晶體
MMFTN0253K	SWST	获取价格	小信号金氧半電晶體
MMFTN0253K-AH	SWST	获取价格	小信号金氧半電晶體
MMFTN0337KHP	SWST	获取价格	小信号金氧半電晶體
MMFTN0360K	SWST	获取价格	小信号金氧半電晶體
MMFTN0360K-AH	SWST	获取价格	小信号金氧半電晶體

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