5秒后页面跳转
MMFT960T1 PDF预览

MMFT960T1

更新时间: 2024-01-14 00:57:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 82K
描述
Power MOSFET 300 mA, 60 Volts

MMFT960T1 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-261AA包装说明:CASE 318E-04, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.29外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.3 A最大漏极电流 (ID):0.3 A
最大漏源导通电阻:1.7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.8 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMFT960T1 数据手册

 浏览型号MMFT960T1的Datasheet PDF文件第2页浏览型号MMFT960T1的Datasheet PDF文件第3页浏览型号MMFT960T1的Datasheet PDF文件第4页浏览型号MMFT960T1的Datasheet PDF文件第5页浏览型号MMFT960T1的Datasheet PDF文件第6页浏览型号MMFT960T1的Datasheet PDF文件第7页 
MMFT960T1  
Preferred Device  
Power MOSFET  
300 mA, 60 Volts  
N–Channel SOT–223  
This Power MOSFET is designed for high speed, low loss power  
switching applications such as switching regulators, dc–dc converters,  
solenoid and relay drivers. The device is housed in the SOT–223  
package which is designed for medium power surface mount  
applications.  
Silicon Gate for Fast Switching Speeds  
Low Drive Requirement  
http://onsemi.com  
300 mA  
60 VOLTS  
R
= 1.7 W  
DS(on)  
The SOT–223 Package can be soldered using wave or reflow.  
The formed leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
N–Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Drain–to–Source Voltage  
Gate–to–Source Voltage – Non–Repetitive  
Drain Current  
Symbol  
Value  
60  
Unit  
Volts  
Volts  
mAdc  
Watts  
G
V
V
DS  
S
±30  
300  
0.8  
GS  
I
D
MARKING  
DIAGRAM  
Total Power Dissipation @ T = 25°C  
P
D
A
(Note 1.)  
Derate above 25°C  
6.4  
mW/°C  
°C  
Operating and Storage Temperature  
Range  
T , T  
–65 to  
150  
J
stg  
4
TO–261AA  
CASE 318E  
STYLE 3  
FT960  
LWW  
1
THERMAL CHARACTERISTICS  
2
3
Thermal Resistance –  
Junction–to–Ambient  
R
156  
°C/W  
θJA  
L
WW  
= Location Code  
= Work Week  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum  
recommended footprint.  
PIN ASSIGNMENT  
4
Drain  
1
2
3
Gate Drain Source  
ORDERING INFORMATION  
Device  
MMFT960T1  
Package  
Shipping  
SOT–223 1000 Tape & Reel  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 4  
MMFT960T1/D  

MMFT960T1 替代型号

型号 品牌 替代类型 描述 数据表
MMFT960T1G ONSEMI

类似代替

Power MOSFET 300 mA, 60 Volts N−Channel SOT−223

与MMFT960T1相关器件

型号 品牌 获取价格 描述 数据表
MMFT960T1_06 ONSEMI

获取价格

Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
MMFT960T1G ONSEMI

获取价格

Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
MMFTN0202KE SWST

获取价格

小信号金氧半電晶體
MMFTN0206KW SWST

获取价格

小信号金氧半電晶體
MMFTN0206KW-AH SWST

获取价格

小信号金氧半電晶體
MMFTN0250KW SWST

获取价格

小信号金氧半電晶體
MMFTN0253K SWST

获取价格

小信号金氧半電晶體
MMFTN0253K-AH SWST

获取价格

小信号金氧半電晶體
MMFTN0337KHP SWST

获取价格

小信号金氧半電晶體
MMFTN0360K SWST

获取价格

小信号金氧半電晶體