MMDTA124W
PNP Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
R1
Base
(Input)
R2
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
R2 (KΩ)
MMDTA124W
22
22
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
-VCBO
-VCEO
-VEBO
VI
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Input Voltage
50
50
V
10
V
- 40 to + 10
100
V
Collector Current
-IC
mA
mW
Total Power Dissipation
Ptot
200
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 65 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
60
Typ.
-
Max.
-
Unit
DC Current Gain
hFE
-ICBO
-ICEO
-IEBO
-
at -VCE = 5 V, -IC = 5 mA
Collector Base Cutoff Current
at -VCB = 50 V
-
-
-
-
-
-
-
100
1
nA
μA
μA
V
Collector Emitter Cutoff Current
at -VCE = 30 V
-
Emitter Base Cutoff Current
at -VEB = 5 V
-
-
180
0.15
0.8
-
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0. 5 mA
-VCEsat
-VI(off)
-VI(on)
Input Off Voltage
-
V
at -VCE = 5 V, -IC = 100 µA
Input On Voltage
2.5
V
at -VCE = 0.3 V, -IC = 5 mA
Input Resistance
Resistance Ratio
R1
15.4
0.8
22
1
28.6
1.2
KΩ
R2/R1
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/05/2007