Datasheet > MMDT2222ATB6

MMDT2222ATB6

更新时间： 2024-09-14 10:51:59

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管
页数	文件大小	规格书
4页	184K
描述
DUAL SURFACE MOUNT NPN TRANSISTORS

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MMDT2222ATB6 数据手册

MMDT2222ATB6

DUAL SURFACE MOUNT NPN TRANSISTORS

This device contains two electrically-isolated 2N2222A NPN transistors.

The two transistors have well matched hFE and are encapsulated in an

ultra-small SOT-563 package. This device is ideal for portable

applications where board space is at a premium.

FEATURES

Electrically Isolated Dual NPN Switching Transistor

In compliance with EU RoHS 2002/95/EC directives

APPLICATIONS

General Purpose Amplifier Applications

Hand-Held Computers, PDAs

Device Marking Code: TU

T = 25°C Unless otherwise noted

MAXIMUM RATINGS

Rating

Symbol

Value

Units

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

CEO

6.0

EBO

Collector Current

600

200

Total Power Dissipation (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

°C

stg

THERMAL CHARACTERISTICS

Symbol

Characteristic

Value

625

Units

°C/W

Thermal Resistance, Junction to Ambient (Note 1)

thja

Note 1. FR-4 board 60 x 70 x 1mm with minimum recommended pad layout

1/19/2009

www.panjit.com

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