Datasheet > MMDT2227

MMDT2227

更新时间： 2024-11-24 14:55:23

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
4页	942K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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MMDT2227 技术参数

极性：	NPN PNP	Collector-emitter breakdown voltage：	40
Collector Current - Continuous：	0.6	DC current gain - Min：	100
DC current gain - Max：	300	Transition frequency：	300
Package：	SOT-363	Storage Temperature Range：	-55-150
class：	Transistors

MMDT2227 数据手册

MMDT2227

Small Signal Surface Mount Transistor

SOT-363

Features

Epitaxial planar die construction.

Complementary Pair.

Ultra-small surface mount package.

One 2222A-Type NPN,

One 2907A-Type PNP.

Applications

Dimensions in inches and (millimeters)

Ideal for low power amplification and switching .

Ordering Information

Type No.

Marking

K27

Package Code

SOT-363

MMDT2227

MAXIMUM RATING ,NPN 2222A Section @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Power Dissipation

600

℃/W

℃

P_D

200

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

T_j,T_stg

625

-55 to+150

MAXIMUM RATING ,PNP 2907A Section @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Collector Current -Continuous

Power Dissipation

-600

200

℃/W

℃

P_D

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

T_j,T_stg

625

-55 to+150

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