Datasheet > MMDT2227

MMDT2227

更新时间： 2024-09-14 10:51:59

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
6页	439K
描述
Multi-Chip Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMDT2227 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.56	Base Number Matches：	1

MMDT2227 数据手册

MMDT2227

NPN-PNP Silicon

Elektronische Bauelemente

Multi-Chip Transistor

RoHS Compliant Product

SOT-363

* Features

8^o

.055(1.40)

.047(1.20)

.026TYP

(0.65TYP)

Power dissipation

PCM : 0.2 W (Tamp.= 25 C)

Collector current

.021REF

(0.525)REF

ICM : 0.2/-0.2 A

Collector-base voltage

.053(1.35)

.045(1.15)

.096(2.45)

.085(2.15)

V(BR)CBO : 75/-60 V

.018(0.46)

.010(0.26)

Operating & Storage junction Temperature

.014(0.35)

.006(0.15)

.003(0.08)

Tj, Tstg : -55 C~ +150 C

.087(2.20)

.079(2.00)

.004(0.10)

.000(0.00)

C₂

B₁

E₁

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

Dimensions in inches and (millimeters)

E₂

B₂

C₁

Electrical Characteristics( Tamb=25^OC unless otherwise specified)

NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=10μA,I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=10mA,I_B=0

I_E=10μA,I_C=0

V_CB=60V,I_E=0

300

0.3

Emitter cut-off current

I_EBO

V_EB=3V,I_C=0

DC current gain

h_FE

V_CE=10V,I_C=150mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

V_CE=20V,I_C=20mA,f=100MHz

V_CB=10V,I_E=0,f=1MHz

100

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

f_T

Collector-emitter saturation voltage

Base -emitter saturation voltage

1.2

Transition frequency

300

MHz

Collector output capacitance

C_ob

V_CE=10V,I_c=0.1mA,

Noise Figure

f=1KHZ,Rs=1KΩ

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jan-2006 Rev. B

Page 1 of 6

12 3 4 5 6

中文翻译

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